BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
0.120(3.04)
30/45/65 Volts
POWER
330 mWatts
0.006(0.15)MIN.
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
•
•
•
•
•
Collector current IC = 100mA
Acqire quality system certificate : TS16949
AEC-Q101 qualified
Lead free in comply with EU RoHS 2011/65/EU directives
Green molding compound as per IEC61249 Std. .
(Halogen Free)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
0.004(0.10)
0.000(0.00)
Device Marking:
BC846A-AU=46A BC847A-AU=47A
BC846B-AU=46B BC847B-AU=47B
BC848A-AU=48A
BC848B-AU=48B
BC849B-AU=49B
BC849C-AU=49C
BC850B-AU=50B
BC850C-AU=50C
BC847C-AU=47C BC848C-AU=48C
ABSOLUTE RATINGS
Parameter
Collector - Emitter Voltage
BC846-AU
BC847-AU,BC850-AU
BC848-AU,BC849-AU
BC846-AU
BC847-AU,BC850-AU
BC848-AU,BC849-AU
BC846-AU
BC847-AU,BC850-AU
BC848-AU,BC849-AU
Symbol
V
CEO
Value
65
45
30
80
50
30
6
6
5
100
Units
V
Collector - Base Voltage
V
CBO
V
Emitter - Base Voltage
Collector Current - Continuous
V
EBO
I
C
V
mA
THERMAL CHARACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Operating Junction Temperature and Storage Temperature Range
Symbol
P
TOT
R
JA
T
J
,T
STG
Value
330
375
-55 to 150
Units
mW
O
C/W
O
C
Note 1: Transistor mounted on FR-4 board 8 cm .
August 5,2013-REV.06
PAGE . 1
2
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES
ELECTRICAL CHARACTERISTICS
P a ra me te r
C o lle c to r - E mi tte r
B re a k d o wn Vo lta g e
C o lle c to r - B a s e
B re a k d o wn Vo lta g e
E mi tte r - B a s e
B re a k d o wn Vo lta g e
E mi tte r -B a s e C uto ff
C urr e nt
C o lle c to r -B a s e
C uto ff C urr e nt
D C C urre nt Ga i n
B C 8 4 6 -A U~ B C 8 4 8 -A U S uffi x " A "
B C 8 4 6 -A U~ B C 8 5 0 -A U S uffi x " B "
B C 8 4 7 -A U~ B C 8 5 0 -A U S uffi x " C "
B C 8 4 6 -A U~ B C 8 4 8 -A U S uffi x " A "
B C 8 4 6 -A U~ B C 8 5 0 -A U S uffi x " B "
B C 8 4 7 -A U~ B C 8 5 0 -A U S uffi x " C "
B C 8 4 6 A -A U/B -A U
B C 8 4 7 A -A U/B -A U/C - A U,B C 8 5 0 B - A U/C -A U
B C 8 4 8 A -A U/B -A U/C - A U,B C 8 4 9 B - A U/C -A U
B C 8 4 6 A -A U/B -A U
B C 8 4 7 A -A U/B -A U/C - A U,B C 8 5 0 B - A U/C -A U
B C 8 4 8 A -A U/B -A U/C - A U,B C 8 4 9 B - A U/C -A U
B C 8 4 6 A -A U/B -A U
B C 8 4 7 A -A U/B -A U/C - A U,B C 8 5 0 B - A U/C -A U
B C 8 4 8 A -A U/B -A U/C - A U,B C 8 4 9 B - A U/C -A U
S ymb o l
Te s t C o nd i ti o n
MIN.
65
45
30
80
50
30
6
6
5
-
-
TYP.
MA X .
Uni ts
V
(B R)
C E O
IC =1 0 mA , IB =0
-
-
V
V
(B R)
C B O
IC =1 0 uA , IE = 0
-
-
V
V
(B R)
E B O
IE = 1 0 uA , IC = 0
-
-
V
I
E B O
I
C B O
V E B =5
V C B = 3 0 V, IE =0
V C B = 3 0 V, IE =0 ,T
J
=1 5 0
O
C
IC =1 0 uA , V C E = 5 V
-
-
90
150
270
180
290
520
-
0 .7
0 .9
0 .6 6
-
-
100
15
5
-
nA
nA
A
-
h
FE
-
D C C urre nt Ga i n
h
FE
IC =2 mA , V C E = 5 V
IC =1 0 mA , IB =0 .5 mA
IC =1 0 0 mA , IB = 5 mA
IC =1 0 mA , IB =0 .5 mA
IC =1 0 0 mA , IB = 5 mA
IC =2 mA , V C E = 5 V
IC =1 0 mA , V C E =5 V
V C B = 1 0 V, IE =0 , f=1 MHz
11 0
200
420
-
-
0 .5 8
-
-
220
450
800
0 .2 5
0 .6
-
0 .7 0
0 .7 7
4 .5
-
C o lle c to r - E mi tte r
S a tura ti o n Vo lta g e
B a s e - E mi tte r
S a tura ti o n Vo lta g e
B a s e - E mi tte r
Vo lta g e
C o lle c to r - B a s e
C a p a c i ta nc e
V
C E (S AT)
V
B E (S AT)
V
B E ( ON)
C
CBO
V
V
V
pF
NPN
August 5,2013-REV.06
PAGE . 2
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES
ELECTRICAL CHARACTERISTICS CURVE (BC846A-AU,BC847A-AU,BC848A-AU)
100
V
CB
=30V
10
hF
E
300
250
200
150
100
50
0
0.01
V
CE
=5V
T
J
=100° C
T
J
=150° C
I
CB0
, Collector Current (nA)
T
J
=25 C
1
0
25
50
75
100
125
150
Junction Temperature, T
J
(
O
C)
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Fig. 1. Typical I
CB0
vs. Junction Temperature
1200
1000
T
J
= 25 °C
800
Fig. 2. Typical h
FE
vs. Collector Current
1000
V
CE(sat)
(mV)
,
V
BE(ON)
(mV)
,
T
J
= 100 °C
T
J
= 100 °C
100
T
J
= 150 °C
600
400
200
0
0.01
T
J
= 150 °C
V
CE
=5V
T
J
= 25 °C
I
C
/I
B
=20
10
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
1200
1000
800
T
J
= 100 °C
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
10
T
J
= 25 °C
600
400
200
0
0.01
T
J
= 150 °C
I
C
/I
B
=20
Capacitance, C (pF
)
T
J
= 25 °C
C
ib (EB)
V
BE(sat)
(mV)
,
C
ob (CB)
0.1
1
10
100
1
0.1
1
10
100
Reverse Voltage (V)
Collector Current, I
C
(mA)
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
August 5,2013-REV.06
Fig. 6. Typical Capacitances vs. Reverse Voltage
PAGE . 3
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES
ELECTRICA5L CHARACTERISTICS CURVE (BC846B-AU,BC847B-AU,BC848B-AU,BC849B-AU,BC850B-AU)
100
V
CB
=30V
10
hF
E
500
450
400
350
300
250
200
150
100
50
T
J
=25 °C
T
J
=100° C
T
J
=150° C
V
CE
=5V
I
CB0
, Collector Current (nA)
1
0
25
50
75
100
125
150
Junction Temperature, T
J
(
O
C)
0
0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Fig. 1. Typical I
CB0
vs. Junction Temperature
1200
1000
800
V
BE(ON)
(mV)
,
600
400
200
0
0.01
V
CE
=5V
T
J
= 25 °C
V
CE(sat)
(mV)
,
1000
Fig. 2. Typical h
FE
vs. Collector Current
T
J
= 100 °C
T
J
= 100 °C
100
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
I
C
/I
B
=20
0.1
1
10
100
1000
10
0.01
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
1200
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
10
C
ib (EB)
1000
T
J
= 25 °C
800
T
J
= 100 °C
T
J
= 25 °C
600
Capacitance, C (pF
)
V
BE(sat)
(mV)
,
C
ob (CB)
400
I
C
/I
B
=20
200
T
J
= 150 °C
0
0.01
1
0.1
1
10
100
0.1
1
10
100
Collector Current, I
C
(mA)
Reverse Voltage (V)
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
August 5,2013-REV.06
Fig. 6. Typical Capacitances vs. Reverse Voltage
PAGE . 4
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES
ELECTRICAL CHARACTERISTICS CURVE (BC847C-AU,BC848C-AU,BC849C-AU,BC850C-AU)
100
V
CB
=30V
10
hF
E
1200
1000
800
T
J
=150° C
V
CE
=5V
I
CB0
, Collector Current (nA)
T
J
=100° C
T
J
=25 C
600
400
200
0
0.01
1
0
25
50
75
100
125
150
Junction Temperature, T
J
(
O
C)
0.1
1
10
100
1000
Collector Current, IC, (mA)
Fig. 1. Typical I
CB0
vs. Junction Temperature
1200
1000
800
T
J
= 25 °C
V
CE(sat)
(mV)
,
100
1000
Fig. 2. Typical h
FE
vs. Collector Current
V
BE(ON)
(mV)
,
T
J
= 100 °C
T
J
= 100 °C
T
J
= 150 °C
600
400
T
J
= 25 °C
200
0
0.01
T
J
= 150 °C
V
CE
=5V
I
C
/I
B
=20
0.1
1
10
100
1000
10
0.01
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
1200
1000
800
T
J
= 100 °C
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
10
600
400
200
0
0.01
I
C
/I
B
=20
T
J
= 150 °C
0.1
1
10
100
Capacitance, C (pF
)
T
J
= 25 °C
C
ib (EB)
T
J
= 25 °C
V
BE(sat)
(mV)
,
C
ob (CB)
1
0.1
1
10
100
Reverse Voltage (V)
Collector Current, I
C
(mA)
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
August 5,2013-REV.06
Fig. 6. Typical Capacitances vs. Reverse Voltage
PAGE . 5
MEMS传感器
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