MMDT2907A
Dual
PNP
Transistor
Features
■
■
■
Ideal for medium power amplification and switching
Plastic-Encapsulate transistor
Complementary NPN type available MMDT2222A
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted）
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Value
-60
-60
-5
-600
200
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
℃
℃
Schematic Diagram
SOT-363
Electrical
Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
(T
A
=25°C unless otherwise noted）
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
h
FE(2)
Test Conditions
I
C
= -10
μ
A, I
E
=0
I
C
= -10mA, I
B
=0
I
E
=-10
μ
A, I
C
=0
V
CB
=-50V, I
E
=0
V
CE
=-30V,V
EB(off)
=-0.5V
.
V
EB
=-5V, I
C
=0
V
CE
=-10V, I
C
= -0.1mA
V
CE
=-10V, I
C
= -1mA
V
CE
=-10V, I
C
=-10mA
0mA
V
CE
=-10V, I
C
= -150mA
V
CE
=-10V, I
C
=-500mA
00
I
C
=-150mA, I
B
=-15mA
-
I
C
=-500mA, I
B
=- 50mA
I
C
=-150mA, I
B
=-15mA
-
I
C
=-500mA, I
B
= -50mA
V
CE
=-20V, I
C
= -50mA,f
=
100MHz
V
CB
=-10V, I
E
= 0,f
=
1MHz
V
EB
=-2V, I
C
= 0,f
=
1MHz
V
CC
=-30V,I
C
=-150mA, I
B1
=-15mA
V
CC
=-6V, I
C
=-150mA,
I
B1
= I
B2
= -15mA
1/4
Min
-60
-60
-5
-
-
-
75
100
100
100
50
-
-
-
-
200
-
-
-
-
-
-
Max
-
-
-
-10
-50
-10
-
-
-
300
-
-0.4
-1.6
-1.3
-2.6
-
8
30
10
40
225
60
Unit
V
V
V
nA
nA
nA
DC Current Gain
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
C
ob
C
ib
t
d
t
r
t
s
t
f
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
V
V
V
V
MHz
pF
pF
nS
nS
nS
nS
MMDT2907A
Dual
PNP
Transistor
Typical
Characteristics Curve
s
-0.25
(T
A
= 25°C unless otherwise noted)
500
Static Characteristic
COMMON EMITTER
T
a
=25°C
-800uA
-720uA
-640uA
h
FE
h
FE
—— I
C
COMMON EMITTER
V
CE
=-10V
I
C
(A)
-0.20
400
COLLECTOR CURRENT
-560uA
-480uA
DC CURRENT GAIN
-0.15
300
T
a
=100°C
T
a
=25°C
-0.10
-400uA
-320uA
200
-0.05
-240uA
-160uA
I
B
=-80uA
-0
-2
-4
-6
-8
-10
-12
100
-0.00
0
-0.1
-1
-10
-100
-600
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-0.9
V
CEsat
β=10
——
I
C
-1.2
V
BEsat
β=10
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-0.6
-0.8
T
a
=25°C
T
a
=100°C
-0.4
-0.3
T
a
=100°C
T
a
=25°C
-0.0
-1
-10
-100
-600
-0.0
-1
-10
-100
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
2/4
MMDT2907A
Dual
PNP
Transistor
Typical
Characteristics Curve
s
I
C
-600
(T
A
= 25°C unless otherwise noted)
100
—— V
BE
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
COMMON EMITTER
V
CE
=-10V
(mA)
-100
C
ib
(pF)
T
a
=25°C
I
C
COLLECTOR CURRENT
T
a
=25°C
-1
-0.1
-0.0
CAPACITANCE
-10
T
a
=100°C
C
C
ob
10
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.1
-1
-10
-20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
300
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(mW)
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(°C)
3/4
MMDT2907A
Dual
PNP
Transistor
Package Outline
Dimensions
SOT-363
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.100
0.150
2.000
2.200
1.150
1.350
2.150
2.400
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.004
0.006
0.079
0.087
0.045
0.053
0.085
0.094
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Suggested
Pad Layout
Note:
1. Controlling dimension:in millieters
2. General tolerance: 0.05mm
3. The pad layout is for reference purpose only
Ordering Information
Device
MMDT2907A
Package
SOT-363
Marking
K2F
Quantity
3000pcs / Reel
HSF Status
RoHS Compliant
www.goodarksemi.com
4/4
Doc.USMMDT2907AxSC2.0
Dec. 2018
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