PPJU4NA65H
/ PJD4NA65H / PJP4NA65H / PJF4NA65H
650V N-Channel MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@10V,I
D
@1.5A<3.75Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
TO-252
TO-251AB
ITO-220AB-F
TO-220AB
650 V
Current
3A
(Halogen Free)
Mechanical Data
Case : TO-251AB,TO-252 ,TO-220AB, ITO-220AB-F Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
(Note 1)
Power Dissipation
T
C
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
34
0.27
44
0.35
TO-251AB
TO-220AB
ITO-220AB-F
TO-252
UNITS
V
V
A
A
mJ
650
+30
3
12
125
23
0.18
-55~150
34
0.27
W
W/
o
C
o
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
-
-
Junction to Case
Junction to Ambient
T
J
,T
STG
C
R
θJC
R
θJA
3.68
110
2.84
62.5
5.43
120
3.67
110
o
C/W
Limited only By Maximum Junction Temperature
April 17,2015-REV.00
Page 1
PPJU4NA65H
/ PJD4NA65H / PJP4NA65H / PJF4NA65H
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic
(Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
trr
Qrr
---
---
V
GS
=0V, I
S
=3A
dI
F
/ dt=100A/us
(Note 2)
-
-
-
-
-
-
224
1.8
3
12
-
-
A
A
ns
uC
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
V
DD
=325V, I
D
=3A,
R
G
=25Ω
(Note 2,3)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
SD
TEST CONDITION
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
GS
=10V,I
D
=1.5A
V
DS
=650V,V
GS
=0V
V
GS
=+30V,V
DS
=0V
I
S
=3A,V
GS
=0V
MIN.
650
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
3.2
-
-
0.83
16.1
2.5
7
423
55
3.6
8.6
29
42
31
MAX.
-
4
3.75
1.0
+100
1.4
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
Ω
uA
nA
V
V
DS
=520V, I
D
=3A,
V
GS
=10V
(Note 2,3)
V
DS
=25V, V
GS
=0V,
f=1.0MHZ
nC
pF
ns
NOTES :
1. L=30mH, I
AS
=2.8A, V
DD
=50V, R
G
=25ohm, Starting T
J
=25
o
C
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. Guaranteed by design, not subject to production testing
April 17,2015-REV.00
Page 2
PPJU4NA65H
/ PJD4NA65H / PJP4NA65H / PJF4NA65H
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction Temperature
Fig.5 Capacitance vs. Drain-Source Voltage
Fig.6 Source-Drain Diode Forward Voltage
April 17,2015-REV.00
Page 3
PPJU4NA65H
/ PJD4NA65H / PJP4NA65H / PJF4NA65H
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate Charge
Fig.8 BV
DSS
vs. Junction Temperature
Fig.9
Threshold Voltage Variation with Temperature
Fig.10 Maximum Safe Operating Area
Fig.11 Maximum Safe Operating Area
Fig.12 Maximum Safe Operating Area
April 17,2015-REV.00
Page 4
PPJU4NA65H
/ PJD4NA65H / PJP4NA65H / PJF4NA65H
TYPICAL CHARACTERISTIC CURVES
Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width
Fig.14 PJP Normalized Transient Thermal Impedance vs. Pulse Width
Fig.15 PJF Normalized Transient Thermal Impedance vs. Pulse Width
April 17,2015-REV.00
Page 5
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