NEW PRODUCT
MMBZ5221BS - MMBZ5259BS
200mW SURFACE MOUNT ZENER DIODE
POWER SEMICONDUCTOR
Features
•
•
•
•
Planar Die Construction
Dual Isolated Zeners in Ultra-Small Surface
Mount Package
General Purpose
Ideally Suited for Automated Assembly
Processes
SOT-363
A
C
1
NC
Dim
A
2
Min
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
A
B
B C
KXX
A
1
NC
C
D
F
H
J
M
Mechanical Data
•
•
•
•
•
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Marking Code (See Table on Page 2)
Weight: 0.006 grams (approx.)
0.65 Nominal
C
2
H
K
K
L
M
J
D
F
L
All Dimensions in mm
Maximum Ratings
Zener Current
Forward Voltage
Power Dissipation (Note 1)
@ T
A
= 25°C unless otherwise specified
Symbol
@ I
F
= 10mA
V
F
P
d
R
θJA
T
j,
T
STG
Value
P
d
/V
Z
0.9
200
625
-65 to +150
Unit
V
mW
K/W
°C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, T
p
≤
1.0ms.
DS31039 Rev. 4P-1
1 of 3
MMBZ5221BS - MMBZ5259BS
NEW PRODUCT
Electrical Characteristics
Type
Number
Marking
Code
Nom (V)
MMBZ5221BS
MMBZ5223BS
MMBZ5225BS
MMBZ5226BS
MMBZ5227BS
MMBZ5228BS
MMBZ5229BS
MMBZ5230BS
MMBZ5231BS
MMBZ5232BS
MMBZ5234BS
MMBZ5235BS
MMBZ5236BS
MMBZ5237BS
MMBZ5239BS
MMBZ5240BS
MMBZ5241BS
MMBZ5242BS
MMBZ5243BS
MMBZ5245BS
MMBZ5246BS
MMBZ5248BS
MMBZ5250BS
MMBZ5251BS
MMBZ5252BS
MMBZ5254BS
MMBZ5256BS
MMBZ5257BS
MMBZ5258BS
MMBZ5259BS
Notes:
KC1
KC3
KC5
KG1
KG2
KG3
KG4
KG5
KE1
KE2
KE4
KE5
KF1
KF2
KF4
KF5
KH1
KH2
KH3
KH5
KJ1
KJ3
KJ5
KK1
KK2
KK4
KM1
KM2
KM3
KM4
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
@ T
A
= 25°C unless otherwise specified
Test
Current
I
ZT
Max (V)
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7.0
6.2
5.6
5.2
5.0
4.2
3.8
3.4
3.2
30
30
30
28
24
23
22
19
17
11
7.0
5.0
6.0
8.0
10
17
22
30
13
16
17
21
25
29
33
41
49
58
70
80
Maximum Zener
Impedance
Z
ZT
@
I
ZT
Zener Voltage Range (Note 2)
V
Z
@ I
ZT
Min (V)
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
Maximum Reverse
Leakage Current
I
R
mA
@ V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
4.0
5.0
6.0
6.5
7.0
8.0
8.4
9.1
9.9
11
12
14
15
17
18
21
23
25
27
30
Z
ZK
@ I
ZK
= 0.25mA
W
1200
1300
1600
1600
1700
1900
2000
1900
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
100
75
50
25
15
10
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, T
p
£
1.0ms.
DS31039 Rev. 4P-1
2 of 3
MMBZ5221BS - MMBZ5259BS
1000
NEW PRODUCT
0.4
0.3
C
J
, JUNCTION CAPACITANCE (pF)
P
D
, POWER DISSIPATION (W)
0V BIAS
100
0.2
10
0.1
0
0
25
50
75
100
125
150
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 2 Typical Capacitance
100
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs Ambient Temperature
1000
100
DYNAMIC ZENER IMPEDANCE (
Ω
)
I
Z
= 1.0mA
100
P
PK
, PEAK SURGE POWER (W)
10
10
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 3 Zener Voltage vs. Zener Impedence
100
1
1
10
100
1000
PULSE WIDTH (ms)
Fig. 4 Maximum Non-repetitive Surge Power
DS31039 Rev. 4P-1
3 of 3
MMBZ5221BS - MMBZ5259BS
模拟电子
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