LITE-ON
SEMICONDUCTOR
MBR730 thru MBR760
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 7.5
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
B
C
K
PIN
1
2
TO-220AC
L
M
D
A
E
TO-220AC
MIN.
DIM.
MAX.
14.22
15.88
A
10.67
B
9.65
3.43
C
2.54
D
6.86
5.84
9.28
8.26
E
6.35
F
-
14.73
12.70
G
H
5.33
4.83
0.51
1.14
0.30
0.64
3.53
4.09
L
3.56
4.83
M
1.14
1.40
2.92
N
2.03
All Dimensions in millimeter
I
J
K
F
G
I
H
J
N
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
PIN 1
PIN 2
CASE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
SYMBOL
MBR730
MBR735
35
24.5
35
MBR740
40
28
40
MBR745
45
31.5
45
MBR750
50
35
50
MBR760
60
42
60
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
30
21
30
@T
C
=
125 C
7.5
150
10000
-
0.57
0.84
0.72
0.1
15
3.5
400
-55 to +150
-55 to +175
0.75
0.65
-
-
0.5
50
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR )
Maximum Forward
Voltage (Note 1)
I
FSM
dv/dt
A
V/us
T
J
=25 C
T
J
=125 C
T
J
=25 C
T
J
=125 C
Maximum DC Reverse Current
@T
J
=25 C
at Rated DC Blocking Voltage
@T
J
=125 C
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
I
F
=7.5A @
I
F
=7.5A @
I
F
=15A @
I
F
=15A @
V
F
V
I
R
R
0JC
C
J
mA
C/W
pF
T
J
T
STG
C
C
REV. 3, 13-Sep-2001, KTHA02
NOTES : 1. 300us Pulse Width, Duty Cycle 2%
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
RATING AND CHARACTERISTIC CURVES
MBR730 thru MBR760
AVERAGE FORWARD CURRENT
AMPERES
10
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
8
100
6
4
RESISTIVE OR
INDUCTIVE LOAD
50
2
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
0
1
2
5
10
20
50
100
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
10
T
J
= 125 C
10
MBR730 ~ MBR745
1.0
MBR750 ~ MBR760
0.1
T
J
= 75 C
1.0
0.01
T
J
= 25 C
T
J
= 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
0
20
40
60
80
100
120
140
0.1
0.1
0.2
0.3
0.4
0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACITANCE , (pF)
1000
T
J
= 25 C, f= 1MHz
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
REV. 3, 13-Sep-2001, KTHA02
详细参数
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