RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72J, 4 PIN
| 参数名称 | 属性值 |
| 包装说明 | POST/STUD MOUNT, O-CRPM-F4 |
| 针数 | 4 |
| Reach Compliance Code | unknow |
| 最大集电极电流 (IC) | 4 A |
| 基于收集器的最大容量 | 45 pF |
| 集电极-发射极最大电压 | 40 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 10 |
| JESD-30 代码 | O-CRPM-F4 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 最高工作温度 | 175 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND |
| 封装形式 | POST/STUD MOUNT |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 40 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | FLAT |
| 端子位置 | RADIAL |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 200 MHz |
| Base Number Matches | 1 |
| 2N4128 | 2N5642 | 2N3632 | 2N4041 | 2N5643 | |
|---|---|---|---|---|---|
| 描述 | RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72J, 4 PIN | RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72E, 4 PIN | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-60, TO-60, 3 PIN | RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72J, 4 PIN | RF Power Bipolar Transistor, 1-Element, Silicon, NPN, MT-72E, 4 PIN |
| 包装说明 | POST/STUD MOUNT, O-CRPM-F4 | POST/STUD MOUNT, O-CRPM-F4 | TO-60, 3 PIN | POST/STUD MOUNT, O-CRPM-F4 | POST/STUD MOUNT, O-CRPM-F4 |
| 针数 | 4 | 4 | 3 | 4 | 4 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow |
| 最大集电极电流 (IC) | 4 A | 3 A | 3 A | 1 A | 5 A |
| 集电极-发射极最大电压 | 40 V | 35 V | 40 V | 40 V | 35 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 10 | 5 | 5 | 10 | 5 |
| JESD-30 代码 | O-CRPM-F4 | O-CRPM-F4 | O-MUPM-P3 | O-CRPM-F4 | O-CRPM-F4 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 3 | 4 | 4 |
| 最高工作温度 | 175 °C | 200 °C | 200 °C | 175 °C | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | METAL | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 40 W | 30 W | 23 W | 18 W | 60 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | FLAT | FLAT | PIN/PEG | FLAT | FLAT |
| 端子位置 | RADIAL | RADIAL | UPPER | RADIAL | RADIAL |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 200 MHz | 250 MHz | 250 MHz | 400 MHz | 200 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| 基于收集器的最大容量 | 45 pF | 35 pF | - | 8 pF | 65 pF |
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