NT5CB128M8DN/NT5CB64M16DP
NT5CC128M8DN/NT5CC64M16DP
1Gb DDR3 D-die SDRAM
Feature
Table 1: CAS Latency Frequency
-BE*
Speed Bins
DDR3/L-1066
CL7
Parameter
Clock
Frequency
tRCD
tRP
tRC
tRAS
tCK
(Avg.)
@CL5
tCK
(Avg.)
@CL6
tCK
(Avg.)
@CL7
tCK
(Avg.)
@CL8
tCK
(Avg.)
@CL9
tCK
(Avg.)
@CL10
tCK
(Avg.)
@CL11
tCK
(Avg.)
@CL12
tCK
(Avg.)
@CL13
tCK
(Avg.)
@CL14
13.125
13.125
50.625
37.5
3
2.5
1.875
1.875
-
-
-
-
-
-
-
-
70K
3.3
3.3
2.5
2.5
-
-
-
-
-
12
12
48
36
2.5
2.5
1.875
1.5
1.5
1.5
-
-
-
-
-
-
70K
3.3
3.3
2.5
2.5
1.875
1.875
-
-
-
12.5
12.5
47.5
35
2.5
2.5
1.875
1.5
1.5
1.25
1.25
-
-
-
-
-
70K
3.3
3.3
2.5
2.5
1.875
1.875
1.5
-
-
12.84
12.84
46.84
34
2.5
2.5
1.875
1.875
1.5
1.5
1.25
1.07
1.07
-
-
-
70K
3.3
3.3
2.5
2.5
1.875
1.875
1.5
1.25
1.25
12.155
12.155
45.155
33
2.5
2.5
1.875
1.875
1.5
1.25
1.25
1.07
0.938
0.938
-
-
-
70K
3.3
3.3
2.5
2.5
1.875
1.875
1.5
1.25
1.25
1.07
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Min.
300
Max.
533
Min.
300
-CF/CFI*
DDR3/L-1333
CL8
Max.
667
Min.
300
-DH/DHI*
DDR3/L-1600
CL10
Max.
800
Min.
300
-EJ*
DDR3-1866
CL12
Max.
933
Min.
300
-FK*
DDR3-2133
CL13
Max.
1066
tCK(Avg.)
MHz
Units
*The timing specification of high speed bin is backward compatible with low speed bin
REV 1.3
Feb. 2012
CONSUMER DRAM
1
©
NANYA TECHNOLOGY CORP
.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT5CB128M8DN/NT5CB64M16DP
NT5CC128M8DN/NT5CC64M16DP
1Gb DDR3 D-die SDRAM
1.35V -0.067/+0.1V &1.5V ± 0.075V (JEDEC
Standard Power Supply)
8 Internal memory banks (BA0- BA2)
Differential clock input (CK,
CK)
Programmable
CAS
Latency: 5, 6, 7, 8, 9,
10, 11, 12, 13, (14)
POSTED CAS ADDITIVE Programmable Additive
Latency: 0, CL-1, CL-2
Programmable Sequential / Interleave Burst Type
Programmable Burst Length: 4, 8
8n-bit prefetch architecture
Output Driver Impedance Control
Differential bidirectional data strobe
Write Leveling
OCD Calibration
Dynamic ODT (Rtt_Nom & Rtt_WR)
Auto Self-Refresh
Self-Refresh Temperature
RoHS Compliance
Lead-Free and Halogen-Free
Packages:
78-Ball BGA for x8 components
96-Ball BGA for x16 components
Operation Temperture
Commerical grade (0
℃≦
TC
≦
95
℃
)
- BE, CF, DH, EJ, FK
Industial grade (-40
℃≦
TC
≦
95
℃
)
- CFI, DHI
REV 1.3
Feb. 2012
CONSUMER DRAM
2
©
NANYA TECHNOLOGY CORP
.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT5CB128M8DN/NT5CB64M16DP
NT5CC128M8DN/NT5CC64M16DP
1Gb DDR3 D-die SDRAM
Description
The 1Gb Double-Data-Rate-3 (DDR3/L) B-die DRAMs is double data rate architecture to achieve high-speed operation. It
is internally configured as an eight bank DRAM.
The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 banks or 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices
achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3/L DRAM key features and all of the control and address inputs are
synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks
(CK rising and
CK
falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source
synchronous fashion.
These devices operate with a single 1.5V ± 0.075V &1.35V -0.067/+0.1V power supply and are available in BGA packages.
REV 1.3
Feb. 2012
CONSUMER DRAM
3
©
NANYA TECHNOLOGY CORP
.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT5CB128M8DN/NT5CB64M16DP
NT5CC128M8DN/NT5CC64M16DP
1Gb DDR3 D-die SDRAM
Fig. 1:
Pin Configuration
–
78 balls BGA Package (x8)
< TOP View>
See the balls through the package
x8
1
VSS
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
VDD
VSS
2
VDD
VSSQ
DQ2
DQ6
VDDQ
VSS
VDD
CS
BA0
A3
A5
A7
RESET
3
NC
DQ0
DQS
DQS
DQ4
RAS
CAS
WE
BA2
A0
A2
A9
A13
A
B
C
D
E
F
G
H
J
K
L
M
N
7
NU/TDQS
DM/TDQS
DQ1
VDD
DQ7
CK
CK
A10/AP
NC
A12/BC
A1
A11
NC
8
VSS
VSSQ
DQ3
VSS
DQ5
VSS
VDD
ZQ
VERFCA
BA1
A4
A6
A8
9
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
REV 1.3
Feb. 2012
CONSUMER DRAM
4
©
NANYA TECHNOLOGY CORP
.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
NT5CB128M8DN/NT5CB64M16DP
NT5CC128M8DN/NT5CC64M16DP
1Gb DDR3 D-die SDRAM
Fig. 2: Pin Configuration
–
96 balls BGA Package (X16)
< TOP View>
See the balls through the package
x 16
1
VDDQ
VSSQ
VDDQ
VSSQ
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
VDD
VSS
BA0
A3
A5
A7
BA2
A0
A2
A9
NC
2
DQU5
VDD
DQU3
VDDQ
VSSQ
DQL2
DQL6
VDDQ
VSS
VDD
DQL4
3
DQU7
VSS
DQU1
DMU
DQL0
DQSL
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
A10/AP
NC
A12/
A1
A11
NC
DQSU
DQU0
DML
DQL1
VDD
DQL7
CK
7
DQU4
8
VDDQ
DQU6
DQU2
VSSQ
VSSQ
DQL3
VSS
DQL5
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
9
VSS
VSSQ
VDDQ
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
REV 1.3
Feb. 2012
CONSUMER DRAM
5
©
NANYA TECHNOLOGY CORP
.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
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