LITE-ON
SEMICONDUCTOR
T4M35T-B SERIES
TRIACS
4 AMPERES RMS
600 thru 800 VOLTS
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
TO-220AB
FEATURES
Blocking Voltage to 800 Volts
On-State Current Rating of 4.0 Amperes RMS at 100℃
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt - 500 V/ms minimum at 125℃
Minimizes Snubber Networks for Protection
High Surge Current Capability - 40 Amperes
Industry Standard TO-220AB Package
High Commutating di/dt - 6.0 A/ms minimum at 125℃
Operational in Three Quadrants: Q1, Q2, and Q3
Pb-Free Package
B
C
K
E
PIN
1
2
3
L
M
D
A
F
G
I
J
N
TO-220AB
MAX.
MIN.
DIM.
14.22
15.88
A
10.67
9.65
B
3.43
C
2.54
D
5.84
6.86
9.28
E
8.26
6.35
F
-
14.73
12.70
G
H
2.29
2.79
0.51
1.14
I
J
0.30
0.64
K
3.53
4.09
3.56
4.83
L
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
PIN ASSIGNMENT
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
Rating
Peak Repetitive Off– State Voltage (1) (T
J
= -40 to 125
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
T4M35T600B
T4M35T800B
V
DRM
,
V
RRM
600
800
Volts
Symbol
Value
Unit
On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz,
T
C
=100
℃
)
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz,
T
J
= 25
℃
)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power (T
c
= 100
℃
,
Tp
≦
1.0 us)
Average Gate Power (T
c
= 100
℃
,
t=8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
4.0
40
6.6
0.5
0.1
-40 to +125
-40 to +150
Amp
Amps
A
2
s
Watt
Watt
℃
℃
T
J
Tstg
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV. 2 Jun-2005, KTXC06
RATING AND CHARACTERISTIC CURVES
T4M35T-B SERIES
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds
Symbol
RthJC
RthJA
Value
2.2
62.5
260
Unit
℃
/W
T
L
℃
ELECTRICAL CHARACTERISTICS
(T
J
=25
℃
unless otherwise noted; Electrical apply in both directions)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current
(V
D
=Rated V
DRM,
V
RRM;
Gate Open)
T
J
=25
℃
T
J
=125
℃
I
DRM
I
RRM
----
----
----
----
10
2.0
uA
mA
ON CHARACTERISTICS
Peak On-State Voltage
(I
TM=
±
6A Peak @
Tp
≦
2.0 ms, Duty Cycle
≦
2%)
V
TM
----
1.3
1.6
Volts
Gate Trigger Current (Continuous dc)
(V
D
= 12V; R
L
= 100 Ohms)
I
GT1
I
GT2
I
GT3
8.0
8.0
8.0
12
16
21
35
35
35
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V; R
L
=100 Ohms)
V
GT1
V
GT2
V
GT3
0.5
0.5
0.5
0.8
0.8
0.8
1.3
1.3
1.3
Volts
Latching Current (V
D
= 12 V, I
G
= 35 mA)
I
L1
I
L2
I
L3
----
----
----
25
40
20
60
80
60
mA
Holding Current (V
D
= 12 V, Initiating Current = ± 200 mA,
Gate Open)
I
H
6
20
35
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(V
D
=0.67 x Rated V
DRM
, Exponential Waveform, Gate Open,
T
J
=125
℃
)
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 usec; diG/dt = 200 mA/usec; f = 60 Hz
Rate of Change of Commutating Current (V
D
= 400 V, I
TM
= 4A,
Commutating dv/dt = 18 V/us, Gate Open, T
J
= 125
℃
, f = 250 Hz,
C
L
= 5.0 uF, L
L
= 20 mH, No Snubber)
dv/dt
500
1500
----
V/us
di/dt
----
----
10
A/us
(di/dt)c
6.0
8.4
----
A/ms
RATING AND CHARACTERISTIC CURVES
T4M35T-B SERIES
Quadrant Definitions
All polarities are referenced to MT1
Whith in -phase signal (using standard AC lines) quadrants I and III are used
RATING AND CHARACTERISTIC CURVES
T4M35T-B SERIES
RATING AND CHARACTERISTIC CURVES
T4M35T-B SERIES
◎
Specifications mentioned in this publication are subject to change without notice.
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