LITE-ON
SEMICONDUCTOR
T8M10F-600B
TRIACS
8 AMPERES RMS
600 VOLTS
TO-220AB
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
FEATURES
Sensitive Gate Triggering in 3 Modes for AC Triggering
on Sinking Current Sources
Four Mode Triggering for Drive Circuits that Source
Current
All Diffused and Glass-Passivated Junctions for
Parameter Uniformity and Stability
Center Gate Geometry for Uniform Current Spreading
C
K
B
L
M
D
A
PIN
1
2
3
E
O
F
G
MECHANICAL DATA
Case: Molded plastic
RoHs Compliant (2002/95/EC)
Weight: 0.07 ounces, 2.0 grams
I
J
N
H
H
TO-220AB
MAX.
DIM.
MIN.
A
14.22
15.88
B
10.67
9.65
C
3.43
2.54
D
6.86
5.84
E
9.28
8.26
F
6.35
-
G
14.73
12.70
H
2.29
2.79
I
1.14
0.51
J
0.40
0.67
K
3.53
4.09
L
3.56
4.83
M
1.14
1.40
N
2.92
2.03
O
1.17
1.37
All Dimensions in millimeter
PIN ASSIGNMENT
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
Rating
Symbol
Value
Unit
Peak Repetitive Off– State Voltage (1) (T
J
= -40 to 110℃, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
600
Volts
On-State RMS Current (T
C
= 80
℃
) Full Cycle Sine Wave 50 to 60 Hz
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz,
T
J
= 25
℃
)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power ( t
≦
2.0 us,
Tc
= 80℃)
Average Gate Power (t
≦
8.3 ms,
Tc
= 80℃)
Peak Gate Current ( t
≦
2.0 us,
Tc
= 80℃)
Peak Gate Voltage( t
≦
2.0 us, Tc = 80
℃
)
Operating Junction Temperature Range
Storage Temperature Range
I
T(RMS)
I
TSM
It
P
GM
P
G(AV)
I
GM
V
GM
2
8
80
26.5
20
0.5
2.0
10
-40 to +125
-40 to +150
Amp
Amps
As
Watt
Watt
Amp
Volts
℃
℃
2
T
J
Tstg
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV. 3, Mar-2010, KTXC35
RATING AND CHARACTERISTIC CURVES
T8M10F600B
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds
Symbol
Rth
JC
Rth
JA
Value
2.2
62.5
260
Unit
℃
/W
℃
T
L
ELECTRICAL CHARACTERISTICS
(T
j
=25℃ unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current
(V
D
=Rated V
DRM
and V
RRM
)
T
J
=25
℃
T
J
=125
℃
I
DRM
I
RRM
----
----
----
----
10
2.0
uA
mA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(I
TM=
± 11A Peak @Tp
≦
2.0 ms, Duty Cycle
≦
2%)
V
TM
I
GT1
I
GT2
I
GT3
I
GT4
----
----
----
----
----
----
----
----
----
----
1.8
10.0
10.0
10.0
20.0
Volts
Gate Trigger Current (V
D
= 12V, R
L
= 100 Ohms)
mA
Holding Current
(VD =12 V, RL = 100 Ohms, Initiating Current =± 200 mA ,Gate Open)
I
H
----
----
15
mA
Gate Trigger Voltage (V
D
= 12 V, R
L
=100 Ohms)
V
GT
----
----
1.3
Volts
Latching Current (VD = 12 V, RL = 100 Ohms, IG = 10mA)
IL
----
----
----
----
----
----
----
----
15
30
15
15
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(V
D
= 0.67% Rated V
DRM
, Exponential Waveform, T
C
=110
℃
)
dv/dt
----
50
----
V/us
RATING AND CHARACTERISTIC CURVES
T8M10F600B
Quadrant Definitions
All polarities are referenced to MT1
Whith in -phase signal (using standard AC lines) quadrants I and III are used
RATING AND CHARACTERISTIC CURVES
T8M10F600B
2.5
Q3
1.6
1.4
IGT(Tj) / IGT(25
℃
)
Q2
2
IGT(Tj) / IGT(25
℃
)
Q4
1.2
1
0.8
0.6
Q1& Q3
Q4
Q2
1.5
Q2&Q1
1
0.5
0
-40
Q2&Q1
Q4
-20
0
20
40
60
80
100
120
0.4
-40
-20
0
20
40
60
80
100
120
TJ, JUNCTION TEMPERATURE(
℃
)
Figure 1. Typical IGT versus TJ
TJ, JUNCTION TEMPERATURE(
℃
)
Figure 2. Typical VGT versus TJ
2
1.8
1.6
IGT(Tj) / IGT(25
℃
)
Q1&Q2
2.1
1.8
IGT(Tj) / IGT(25
℃
)
Q1
Q3
Q2
Q3
1.4
1.2
1
0.8
0.6
0.4
0.2
-40
-20
0
20
40
60
Q1&Q2
Q3
1.5
1.2
0.9
0.6
0.3
0
-40
80
100
120
-20
0
20
40
60
80
100
120
TJ, JUNCTION TEMPERATURE(
℃
)
Figure 3. Typical IH versus TJ
TJ, JUNCTION TEMPERATURE(
℃
)
Figure 4. Typical IL versus TJ
IT(RMS) ,RMS ON-STATE CURRENT (AMP)
P(AV) ,AVERAGE POWER DISSIPATION (WATTS)
9
8
7
6
5
4
3
2
1
0
0
25
50
75
100
125
10
8
6
T
J
=25℃
T
J
=125℃
4
2
0
0
2
4
6
8
TC, CASE TEMPERATURE(
℃
)
Figure 5. On-State Current Derating Curve
IT(AV), AVERAGE ON-STATE CURRENT
Figure 6. Power Dissipation versus IT
◎
Specifications
◎Specifications
mentioned in this publication are subject to change without notice.
RATING AND CHARACTERISTIC CURVES
T8M10F600B
IT, INSTANTANEOUS ON-STATE CURRENT (AMP)
6
5
4
3
T
J
=125
℃
T
J
=25
℃
2
1
0
0
10
20
30
40
50
60
70
80
VT, INSTANTANE ON-STATE VOLTAGE(VOLTS)
Figure 7. On-State Characteristics
◎
Specifications mentioned in this publication are subject to change without notice.
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