LITE-ON
SEMICONDUCTOR
T8M10F-B SERIES
TRIACS
8 AMPERES RMS
200 thru 800 VOLTS
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
TO-220AB
FEATURES
Sensitive Gate Triggering in 3 Modes for AC Triggering
on Sinking Current Sources
Four Mode Triggering for Drive Circuits that Source
Current
All Diffused and Glass-Passivated Junctions for
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low
Thermal Resistance and High Heat Dissipation
Center Gate Geometry for Uniform Current Spreading
B
C
K
PIN
1
2
3
L
D
M
A
E
F
G
I
J
N
TO-220AB
MAX.
MIN.
DIM.
14.22
15.88
A
10.67
9.65
B
3.43
C
2.54
D
5.84
6.86
9.28
E
8.26
6.35
F
-
14.73
12.70
G
H
2.29
2.79
0.51
1.14
I
J
0.30
0.64
K
3.53
4.09
3.56
4.83
L
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
PIN ASSIGNMENT
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
Rating
Peak Repetitive Off– State Voltage (1) (T
J
= -40 to 110
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
T8M10F200B
T8M10F400B
T8M10F600B
T8M10F800B
On-State RMS Current (T
C
= 80
℃
) Full Cycle Sine Wave 50 to 60 Hz
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz,
T
J
= 25
℃
)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power ( t
≦
2.0 us,
Tc
=
80℃
)
Average Gate Power (t
≦
8.3 ms,
Tc
= 80
℃
)
Peak Gate Current ( t
≦
2.0 us,
Tc
=
80℃
)
Peak Gate Voltage( t
≦
2.0 us, Tc = 80
℃
)
Operating Junction Temperature Range
Storage Temperature Range
V
DRM
,
V
RRM
200
400
600
800
8.0
80
26
20
0.5
2.0
10
-40 to +125
-40 to +150
Volts
Symbol
Value
Unit
I
T(RMS)
I
TSM
It
P
GM
P
G(AV)
I
GM
V
GM
2
Amp
Amps
A
2
s
Watt
Watt
Amp
Volts
℃
℃
T
J
Tstg
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV. 0, Dec-2005, KTXC26
RATING AND CHARACTERISTIC CURVES
T8M10F-B SERIES
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds
Symbol
RthJC
RthJA
Value
2.0
60
260
Unit
℃
/W
℃
T
L
ELECTRICAL CHARACTERISTICS
(T
c
=25
℃
unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current
(V
D
=Rated V
DRM
and V
RRM
)
T
J
=25
℃
T
J
=125
℃
I
DRM
I
RRM
----
----
----
----
10
2.0
uA
mA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(I
TM=
± 11A Peak @Tp
≦
2.0 ms, Duty Cycle
≦
2%)
Gate Trigger Current (Continuous dc)
(V
D
= 12V, R
L
= 100 Ohms)
V
TM
I
GT1
I
GT2
I
GT3
I
GT4
I
H
----
----
----
----
----
----
----
----
----
----
1.8
10.0
10.0
10.0
20.0
15
Volts
mA
Holding Current (V
D
= 12 V, Initiating Current = ± 200 mA,
Gate Open)
----
----
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
=100 Ohms)
V
GT1
VGT2
VGT3
VGT4
----
----
----
----
----
----
----
----
2.0
2.0
2.0
2.5
Volts
Gate Non - Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
=100 Ohms, Tc=110
℃
)
All Four Quadrants
Gate-Controlled Turn-On Time
(V
D
= Rated V
DRM
, ITM = 16 A Peak, I
G
= 30 mA)
V
GD
0.2
----
----
Volts
tgt
----
1.5
----
us
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(V
D
=Rated V
DRM
, Exponential Waveform, TC=125
℃
)
Critical Rate of Rise of Commutation Voltage
(V
D
= Rated VDRM , I
TM
= 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, T
C
= 80
℃
)
dv/dt
----
25
----
V/us
dv/dt(c)
----
5.0
----
V/us
REV. 0, Dec-2005, KTXC26
RATING AND CHARACTERISTIC CURVES
T8M10F-B SERIES
Quadrant Definitions
All polarities are referenced to MT1
Whith in -phase signal (using standard AC lines) quadrants I and III are used
REV. 0, Dec-2005, KTXC26
RATING AND CHARACTERISTIC CURVES
T8M10F-B SERIES
Figure 1.RMS Current Derating
110
107
a
=30°
60
°
90
°
120
°
180
°
TC, CASE TEMPERATURE ( C)
104
101
98
95
92
89
a
a
o
86
83
80
0
DC
a
= CONDUCTION ANGLE
1
2
3
4
5
6
7
8
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 2. On-State Power Dissipation
10
DC
P(AV), AVERAGE POWER (WATTS)
8
a
a
a
120
°
=180°
6
a
= CONDUCTION ANGLE
60
°
30
°
90
°
TJ = 110
℃
4
2
0
0
1
2
3
4
5
6
7
8
IT(RMS), RMS ON-STATE CURRENT (AMPS)
◎
Specifications mentioned in this publication are subject to change without notice.
REV. 0, Dec-2005, KTXC26
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