SB4045LCT
LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
45 Volts
CURRENT
40 Amperes
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
MECHANICAL DATA
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0655 ounces, 1.859 grams
0.100(2.54)
0.100(2.54)
0.038(0.96)
0.019(0.50)
0.177(4.5)
MAX.
0.624(15.87)
0.548(13.93)
Case : TO-220AB, Plastic
0.058(1.47)
0.042(1.07)
0.50(12.7)MIN.
0.115(2.92)
0.080(2.03)
0.025(0.65)MAX.
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Typical Thermal Resistance per diode
(3)
Operating junction temperature range
Storage temperature range
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
R
ΘJC
T
J
T
STG
VALUE
45
40
20
250
1 .9
-55 to + 150
-55 to + 150
O
UNIT
V
A
A
C /W
o
C
C
o
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=5A
I
F
=10A
I
F
=20A
I
F
=5A
I
F
=10A
I
F
=20A
V
R
=36V
Reverse current per diode
(2)
MIN.
45
TYP.
-
0.38
0.43
0.51
0.27
0.35
0.48
112
-
120
MAX.
-
-
-
0.53
-
-
-
-
500
-
UNIT
V
V
T
J
=25 C
o
Instantaneous forward voltage per
diode
(1)
V
F
T
J
=125
o
C
-
-
-
-
-
-
-
V
μA
μA
mA
I
R
V
R
=45V
T
J
=25
o
C
T
J
=125
o
C
-
-
Note.1.Pulse test : 300μs pulse width, 1% duty cycle
2.Pulse test : pulse width < 40ms
3.Mounted on infinite heatsink
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
June 10,2011-REV.01
PAGE . 1
SB4045LCT
C
J
, Junction Capacitance (pF)
I
F
, Forward Current (A)
25
Per Diode
20
15
10
5
0
0
25
50
75
100
125
150
10000
Per Diode
1000
100
1
10
100
T
C
, Case Temperature (°C)
V
R
, Reverse Bias Voltage (V)
Fig.1 Forward Current Derating Curve
1000
T
J
=150°C
100
T
J
=125°C
10
1
Per Diode
0.1
T
J
=25°C
0.01
20
40
60
80
100
T
J
=75°C
Fig.2 Typical Junction Capacitance
100
Per Diode
T
J
=125°C
10
T
J
=150°C
T
J
=25°C
1
T
J
=75°C
0.1
0
0.2
0.4
0.6
I
R
,Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
I
F
, Forward Current (A)
V
F
, Forward Voltage (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
June 10,2011-REV.01
PAGE . 2
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