SB30100LCT
DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
100 Volts
CURRENT
30 Ampers
MECHANICAL DATA
• Case : TO-220AB, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Weight: 0.0655 ounces, 1.859 grams
.058(1.47)
.042(1.07)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig.1)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy at T
J
=25
o
C,L=60mH per diode
Ty p i c a l T h e r m a l R e s i s t a n c e
Operating junction and storage temperature range
per di ode
per device
per di ode
per di ode
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
A S
R
θ
J C
T
J
,T
STG
VALUE
100
30
15
275
300
2 .5
-55 to + 150
O
UNIT
V
A
A
mJ
C / W
o
C
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
I
R
=1.0mA
I
F
=5A
I
F
=7.5A
I
F
=15A
I
F
=5A
I
F
=7.5A
I
F
=15A
V
R
=70V
Reverse current per diode
(2)
I
R
V
R
=100V
T
A
=25
o
C
T
A
=125
o
C
T
A
=25
o
C
TEST CONDITIONS
MIN.
103
-
-
-
-
-
-
-
-
TYP.
120
0.52
0.58
0.72
0.46
0.53
0.62
10
-
MAX.
-
-
-
0.80
-
-
0.68
-
500
32
UNIT
V
V
Instantaneous forward voltage per diode
(1)
V
F
T
A
=125
o
C
V
µA
µA
mA
Note.1 Pulse test : 300µs pulse width, 1% duty cycle
2. Pulse test : Pulse widh < 40ms
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.4-JUN.26.2009
STAD-AUG.04.2009
PAGE . 1
SB30100LCT
RATINGS AND CHARACTERISTICS CURVES (T
A
=25
o
C unless otherwise noted)
35
Average Forward Current (A)
Junction Capacitance (pF)
Resistive or Inductive Load
30
25
20
15
10
5
0
0
25
50
75
100
125
150
10000
T
J
=25
o
C
f=1.0MHz
Vsig=50mVp-p
1000
100
10
0.1
1
10
100
Case Temperature (
o
C)
Reverse Voltage (V)
Figure 1. Forward Current
Derating Curve
Figure 2. Typical Junction
Capacitance
100
100
Instantaneous Forward
Current (A)
Instantaneous Reverse
Current (mA)
T
A
=100 C
10
o
o
10
T
A
=100
o
C
1
0.1
T
A
=25
o
C
0.01
0.001
10 20
T
A
=125 C
1
T
A
=75 C
T
A
=25 C
o
o
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Instantaneous
Forward Characteristics Per Diode
Figure 4. Typical Reverse
Characteristics Per Diode
REV.0.4-JUN.26.2009
STAD-AUG.04.2009
PAGE . 2
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