PJU1N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 1A, 600V, R
DS(ON)
=11Ω@V
GS
=10V, I
D
=0.5A
•
•
•
•
•
•
Low ON Resistance
Fast Switching
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charge and SMPS
In compliance with EU RoHs 2002/95/EC Directives
T O- 25 1
TO -2 5 1
G
1
D S
3
2
MECHANICAL DATA
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTE RNA L S CHE M ATIC DIA GRA M
2
Drain
ORDERING INFORMATION
TYPE
PJU1N60
1
Gate
MARKING
U1N60
PACKAGE
TO-251
PACKING
3
80PCS/TUBE
S ource
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA ME TE R
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T
A
=2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
E
AS
R
θJ
C
R
θJ
A
P J U1 N6 0
600
+3 0
1
4 .6
28
0 .2 2
-5 5 to +1 5 0
58
4 .5
100
Uni ts
V
V
A
A
W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
C
Avalanche Energy with Single Pulse
I
AS
=1.1A, VDD=50V, L=95mH
mJ
O
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
C /W
C /W
O
Note :
1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
April 12,2010-REV.00
PAGE . 1
PJU1N60
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V
D SS
V
GS (th)
R
D S (o n)
I
DSS
I
GS S
V
GS
=0 V, I
D
=2 5 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
= 10V, I
D
=
0.5
A
V
DS
=
6
00V, V
GS
=0V
V
GS
=+3 0 V, V
D S
=0 V
600
2 .0
-
-
-
-
-
8.3
-
-
-
4 .0
11
10
+1 0 0
V
V
Ω
uA
nΑ
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tra ns fe r
C a p a c i ta nc e
Q
g
Q
gs
Q
gd
t
d (o n)
t
r
t
d (o ff)
t
f
C
C
C
i ss
-
6 .2
1 .4 4
3.32
10.2
5.6
16
1 0 .2
165
17
1.65
7 .8
-
-
14.8
8.0
ns
22
16
220
28
4.2
pF
nC
V
D S
=
4 8 0
V, I
D
=
1 .0
A
V
GS
=1 0 V
-
-
-
V
DD
=3
0
0V, I
D
=
1.0
A
R
G
=
25
Ω
,
V
GS
=1 0 V
-
-
-
-
o ss
V
D S
=2 5 V, V
GS
=0 V
f=1 .0 MH
Z
-
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
I
S
=1 A , V
GS
=0 V
V
GS
=0 V, I
F
=
1
A
d i /d t=1 0 0 A /us
-
-
-
-
-
-
-
-
190
0 .5
1 .0
4 .6
1 .5
-
-
A
A
V
ns
uC
Ma x.P uls e d S o urc e C urre nt
D i o d e F o rwa rd Vo lta g e
Re ve rs e Re c o ve ry Ti me
Re ve rs e Re c o ve ry C ha rg e
NOTE :
Plus Test: Pluse Width < 300us, Duty Cycle < 2%
.
April 12,2010-REV.00
PAGE . 2
PJU1N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
I
D
- Drain Source Current (A)
10
I
D
- Drain-to-Source Current (A)
V
GS
= 20V~ 7.0V
V
DS
=40V
1
6.0V
T
J
= 125
o
C
5.0V
0.1
-55
o
C
25
o
C
0.01
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
2
3
4
5
6
7
V
GS
- Gate-to-Source Voltage (V)
8
Fig.1 Output Characteristric
35
R
DS(ON)
- On Resistance(Ω)
Ω
R
DS(ON)
- On Resistance(Ω)
Ω
30
25
20
15
10
5
0
0
0.5
1
1.5
2
I
D
- Drain Current (A)
2.5
3
V
GS
=10V
V
GS
= 20V
Fig.2 Transfer Characteristric
30
25
20
15
10
T
J
=25
o
C
I
D
=1A
5
0
3
4
5
6
7
8
9
10
V
GS
- Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
R
DS(ON)
- On-Resistance(Normalized)
300
C - Capacitance (pF)
V
GS
=10 V
I
D
=1.0A
250
200
150
100
50
0
f = 1MHz
V
GS
= 0V
Ciss
`
Coss
Crss
-50 -25 0
25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
April 12,2010-REV.00
Fig.6 Capacitance
PAGE. 3
PJU1N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise
℃
V
GS
- Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
0
1
2
3
4
5
Q
g
- Gate Charge (nC)
6
7
V
DS
=480V
V
DS
=300V
V
DS
=120V
10
I
S
- Source Current (A)
I
D
=1A
V
GS
= 0V
1
T
J
= 125
o
C
25
o
C
-55
o
C
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
BV
DSS
- Breakdown Voltage(Normalized)
1.2
I
D
= 250µA
1.1
1
0.9
0.8
-50 -25 0
25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
Fig.9 Breakdown Voltage vs Junction Temperature
April 12,2010-REV.00
PAGE. 4
PJU1N60
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
April 12,2010-REV.00
PAGE . 5
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