PJSD03TS~PJSD36TS
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
• 120 Watts peak pules power( tp=8/20μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
•
•
0.034(0.85)
0.029(0.75)
0.050(1.25)
0.045(1.15)
3~36 Volts
POWER
120 Watts
SOD-523
Unit
：
inch(mm)
0.014(0.35)
0.009(0.25)
0.026(0.65)
0.021(0.55)
APPLICATIONS
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight: 0.0014 grams
• Marking : PJSD03TS : KD
PJSD05TS : KE
PJSD07TS : KF
PJSD08TS : KR
PJSD12TS : LE
PJSD15TS : LM
PJSD24TS : LZ
PJSD36TS : MP
1
2
0.006(0.15)
0.002(0.05)
0.067(1.70)
0.059(1.50)
0.20 MIN.
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power Dissipation (tp=8/20
μs)
ESD Voltage
Operating Temperature
Storage Temperature
Symbol
P
PP
V
ESD
T
J
T
STG
Value
120
25
-50 to +150
-50 to +150
Units
W
KV
O
C
C
O
ELECTRICALCHATACTERISTICS
PJSD03TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=3.3V
I
PP
=5A
0Vdc Bias=f=1MHz
3.3Vdc Bias=f=1MHz
Min.
-
4
-
-
-
-
Typical
-
-
-
-
-
-
Max.
3.3
-
200
6.5
200
100
Units
V
V
μA
V
pF
pF
July 20.2010-REV.00
PAGE . 1
PJSD03TS~PJSD36TS
PJSD05TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=5V
I
PP
=5A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
6.0
-
-
-
-
Typical
-
-
-
-
-
-
Max.
5
-
5
9
110
60
Units
V
V
μA
V
pF
pF
PJSD07TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=7V
I
PP
=8.8A
0Vdc Bias=f=1MHz
Min.
-
7.5
-
-
-
Typical
-
-
-
-
-
Max.
7.0
-
150
22.7
85
Units
V
V
nA
V
pF
PJSD08TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=8V
I
PP
=5A
0Vdc Bias=f=1MHz
Min.
-
8.5
-
-
-
Typical
-
-
-
-
-
Max.
8
-
5
13
70
Units
V
V
μA
V
pF
PJSD12TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=12V
I
PP
=5A
0Vdc Bias=f=1MHz
Min.
-
13.3
-
-
-
Typical
-
-
-
-
-
Max.
12
-
5
17
60
Units
V
V
μA
V
pF
July 20.2010-REV.00
PAGE . 2
PJSD03TS~PJSD36TS
PJSD15TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=15V
I
PP
=5A
0Vdc Bias=f=1MHz
Min.
-
16.6
-
-
-
Typical
-
-
-
-
-
Max.
15
-
5
22
50
Units
V
V
μA
V
pF
PJSD24TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=24V
I
PP
=3A
0Vdc Bias=f=1MHz
Min.
-
26.7
-
-
-
Typical
-
-
-
-
-
Max.
24
-
5
32
25
Units
V
V
μA
V
pF
PJSD36TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=36V
I
PP
=1A
0Vdc Bias=f=1MHz
Min.
-
40
-
-
-
Typical
-
-
-
-
-
Max.
36
-
5
55
20
Units
V
V
μA
V
pF
July 20.2010-REV.00
PAGE . 3
PJSD03TS~PJSD36TS
I
PP
-Peak Pulse Current-% of I
PP
120
t
f
100
80
e
60
40
20
0
0
5
10
t
d
=t I
PP
/2
-t
100
Peak Value I
PP
TEST
m
m
%Of Rated Power
WAVEFORM
PARAMETERS
80
60
40
20
0
Peak Pulse Power
8/20
m
s
Average Power
0
25
50
75
100
125 150
O
15
T-Time-
m
s
20
25
30
T
L
-Lead Temperature- C
FIG. 2-Power Derating Curve
FIG. 1- Pulse Wave Form
P
PP
-Peak Pulse Current-Watts
10000
1000
100
10
0.01
1
10
100
1000
10000
t
d
-Pulse Duration-
m
s
FIG. 3-Peak Pulse Power vs Pulse Time
July 20.2010-REV.00
PAGE . 4
PJSD03TS~PJSD36TS
MOUNTING PAD LAYOUT
SOD-523
Unit
：
inch(mm)
0.016
(0.40)
0.039
(1.00)
0.016
(0.40)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 5K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
July 20.2010-REV.00
0.016
(0.40)
PAGE . 5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
