PJF2N70 / PJU2N70
700V N-Channel Enhancement Mode MOSFET
FEATURES
• 700V, R
DS(ON)
=5.5Ω@V
GS
=10V, I
D
=2A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
ITO-220AB/TO-251
ITO-220AB
TO-251
2
1
DS
G
G
2
D
3
S
MECHANICAL DATA
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJF2N70
PJU2N70
MARKING
F2N70
U2N70
PACKAGE
ITO-220AB
TO-251
PACKING
50PCS/TUBE
80PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
M a xi m um P o w e r D i s s i p a t i o n
D e r a t i ng F a c t o r
T
A
= 2 5
O
C
S ym b o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
, T
S TG
E
AS
R
θ
JC
R
θ
JA
P J F 2 N7 0
700
+30
2
8
20
0 .1 6
P J U2 N7 0
U ni t s
V
V
2
8
31
0 .2 5
A
A
W
O
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
-5 5 to +1 5 0
140
6 .2 5
6 2 .5
4
100
O
C
Avalanche Energy with Single Pulse
I
AS
=2A, VDD=50V, L=45m
Η
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
mJ
C /W
C /W
O
Note :
1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009
PAGE . 1
PJF2N70 / PJU2N70
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ym b o l
Te s t C o n d i t i o n
M i n.
Ty p .
M a x.
U ni t s
S ta ti c
D r a i n- S o ur c e B r e a k d o w n Vo l t a g e
B V
DSS
V
G S ( t h)
R
D S ( o n)
I
DSS
I
GS S
V
GS
= 0 V , I
D
= 2 5 0 uA
V
D S
= V
GS
, I
D
= 2 5 0 uA
V
GS
= 10V, I
D
= 1A
V
DS
=700V, V
GS
=0V
V
G S
=+ 3 0 V , V
D S
= 0 V
700
2 .0
-
-
-
-
-
5.5
-
-
-
4 .0
6.5
10
+100
V
V
Ω
uA
nΑ
G a t e Thr e s ho l d Vo l t a g e
D r a i n- S o ur c e O n- S t a t e
R e s i s t a nc e
Ze r o Ga te Vo lta g e D r a i n
C ur r e nt
Gate Body Leakage
Dynamic
To t a l G a t e C h a r g e
G a t e - S o ur c e C ha r g e
G a t e - D r a i n C ha r g e
Tu r n - O n D e l a y Ti m e
Tu r n - O n R i s e Ti m e
Tu r n - O f f D e l a y Ti m e
Tu r n - O f f F a l l Ti m e
In p u t C a p a c i t a n c e
O ut p ut C a p a c i t a nc e
R e v e r s e Tr a n s f e r
C a p a c i t a nc e
Q
g
Q
gs
Q
gd
t
d ( o n)
t
r
t
d (o ff)
t
f
C
C
C
iss
-
1 0 .8
2 .1
4.5
11.2
10.8
2 2 .4
1 6 .8
338
28.6
2.4
-
-
-
18
16
ns
31
24
395
65
3.6
pF
nC
V
D S
= 5 6 0 V , I
D
= 2 A
V
GS
= 1 0 V
-
-
-
V
DD
=350V ,I
D
=2A
V
GS
=10V , R
G
=25
Ω
-
-
-
-
oss
V
D S
= 2 5 V , V
GS
= 0 V
f=1 .0 MH
Z
-
-
rss
S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d C ur r e nt
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
I
S
= 2 A , V
G S
= 0 V
V
G S
= 0 V , I
F
= 2 A
d i / d t = 1 0 0 A / us
-
-
-
-
-
-
-
-
260
1 .0 9
2 .0
8 .0
1 .4
-
-
A
A
V
ns
uC
M a x. P ul s e d S o ur c e C ur r e nt
D i o d e F o rwa rd Vo lta g e
R e v e r s e R e c o v e r y Ti m e
R e ve r s e R e c o ve r y C ha r g e
NOTE :
Plus Test: Pluse Width < 300us, Duty Cycle < 2%
.
STAD-NOV.24.2009
PAGE . 2
PJF2N70 / PJU2N70
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
4
I
D
- Drain-to-Source Current (A)
10
I
D
- Drain Source Current (A)
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
V
GS
= 20V~ 6.0V
V
DS
=40V
5.0V
T
J
= 125
o
C
1
25
o
C
-55
o
C
0.1
2
3
4
5
6
7
8
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
7.0
R
DS(ON)
- On Resistance(Ω)
Ω
R
DS(ON)
- On Resistance(Ω)
Ω
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2
4
6
8
T
J
=25
o
C
I
D
=1A
VGS=10V
V
GS
= 20V
0
1
2
3
4
5
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75
100 125 150
C - Capacitance (pF)
V
GS
=10 V
I
D
=1.0A
500
400
Ciss
300
200
100
0
0
Crss
5
10
15
20
25
30
f = 1MHz
V
GS
= 0V
Coss
T
J
- Junction Temperature (
o
C)
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
STAD-NOV.24.2009
Fig.6 Capacitance
PAGE. 3
PJF2N70 / PJU2N70
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
V
GS
- Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
0
2
4
6
8
10
12
100
V
DS
=480V
V
DS
=300V
V
DS
=120V
I
S
- Source Current (A)
I
D
=2A
V
GS
= 0V
10
T
J
= 125
o
C
1
25
o
C
-55
o
C
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
- Gate Charge (nC)
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
1.2
Fig.8 Source-Drain Diode Forward Voltage
BV
DSS
- Breakdown Voltage(NORMALIZED)
I
D
= 250µA
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-NOV.24.2009
PAGE. 4
PJF2N70 / PJU2N70
LEGAL STATEMENT
Copyright PanJit International, Inc
2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-NOV.24.2009
PAGE . 5
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