PJSD05 SERIES
400W LOW CLAMPING VOLTAGE SINGLE TVS FOR
PROTECTION
This TVS/Zener Series has been designed to Protect Sensitive Equipment against
ESD and to prevent Latch-Up events in very sensitive CMOS circuitry operating at
5V, 12V, 15V and 24Vdc .These devices come in an industry standard SOD123
package making them suitable for Portable/Computing Electronics, where the board
space is a premium.
SPECIFICATION FEATURES
400W Power Dissipation (8/20µs Waveform)
Very Low Leakage Current
IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance
SOD123 Package
K
A
APPLICATIONS
Personal Digital Assistant (PDA)
Digital Cameras
Portable Instrumentation
Mobile Phones and Accessories
Desktops, Laptops
SOD123
SOD123
MAXIMUM RATINGS
Rating
Peak Pulse Power (8/20µs Waveform)
ESD Voltage (HBM)
Operating Temperature Range
Storage Temperature Range
Symbol
P
pp
V
ESD
TJ
T
stg
Value
400
25
-55 to +125
-55 to +150
Units
W
kV
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25°C
PJSD05
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (820µs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
c
V
c
Cj
Cj
I
BR
= 1 mA
V
R
= 5V
I pp = 5A
I pp = 24A
0 Vdc Bias f = 1MHz
5 Vdc Bias f = 1MHz
Conditions
Min
Typical
Max
5
Units
V
V
6.0
20
7.5
16
550
235
µA
V
V
pF
pF
2/18/2009
Page
1
www.panjit.com
PJSD05 Series
ELECTRICAL CHARACTERISTICS
Tj = 25°C
PJSD12
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 12V
I pp = 5A
I pp = 17A
0 Vdc Bias f = 1MHz
Conditions
Min
Typical
Max
12
Units
V
V
13.3
1
14.5
23
180
µA
V
V
pF
PJSD15
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 15V
I pp = 5A
I pp = 14A
0 Vdc Bias f = 1MHz
Conditions
Min
Typical
Max
15
Units
V
V
16.7
1
19
28
165
µA
V
V
pF
PJSD24
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 24V
I pp = 5A
I pp = 11A
0 Vdc Bias f = 1MHz
Conditions
Min
Typical
Max
24
Units
V
V
26.7
1
29
37
120
µA
V
V
pF
2/18/2009
Page
2
www.panjit.com
PJSD05 SERIES
TYPICAL CHARACTERISTICS
Clamping voltage vs Ipp 8/20µs Surge
40
PJSD24
Surge Pulse Waveform Definition
110
100
90
80
70
60
50
40
30
20
10
0
0
Clamping Voltage, V
35
30
25
20
15
10
5
0
0
5
10
15
20
25
Peak Current, A
PJSD15
PJSD12
PJSD05
Percent of Ipp
50% of Ipp @ 20µs
Rise time 10-90% - 8µs
5
10
15
time, µsec
20
25
30
Capacitance vs. Biasing Voltage @1MHz
600
550
Capacitance, pF
Non-Repetitive Peak Pulse Power vs Pulse Time
1000
Peak Pulse Power - Ppp (W)
500
450
400
350
300
250
200
0
1
2
3
4
5
Bias Voltage, Vdc
PJSD05
100
10
1
10
100
1000
Pulse Duration, µs
2/18/2009
Page 3
www.panjit.com
PJSD05 SERIES
PACKAGE DIMENSIONS AND BOND PAD LAYOUT
2/18/2009
Page 4
www.panjit.com
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
