PJP7N60 / PJF7N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 7A , 600V, R
DS(ON)
=1.2Ω@V
GS
=10V, I
D
=3.5A
•
•
•
•
•
•
Low ON Resistance
Fast Switching
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charge and SMPS
In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
3
S
2
1
D
G
3
2
S
1
D
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2
Drain
ORDERING INFORMATION
1
TYPE
PJP7N60
PJF7N60
MARKING
P7N60
F7N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
3
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA ME TE R
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a o to r
T
A
=2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
E
AS
R
θJ
C
R
θJ
A
P J P 7 N6 0
600
+3 0
7
28
125
1 .0
P J F 7 N6 0
Uni ts
V
V
7
28
45
0 .3 6
A
A
W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0
530
1
6 2 .5
2 .7 8
100
O
C
Avalanche Energy with Single Pulse
I
AS
=7.0A, VDD=50V, L=19.5mH
mJ
C /W
C /W
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
O
Note :
1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
March 31,2010-REV.00
PAGE . 1
PJP7N60 / PJF7N60
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V
D SS
V
GS (th)
R
D S (o n)
I
DSS
I
GS S
V
GS
=0 V, I
D
=2 5 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
= 10V, I
D
= 3.5A
V
DS
=600V, V
GS
=0V
V
GS
=+3 0 V, V
D S
=0 V
600
2 .0
-
-
-
-
-
0.96
-
-
-
4 .0
1.2
10
+1 0 0
V
V
Ω
uA
nΑ
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tra ns fe r
C a p a c i ta nc e
Q
g
Q
gs
Q
gd
-
1 9 .8
5 .8
8.2
13.2
16.4
4 0 .8
2 1 .6
11 5 2
110
10
-
-
-
18
26
ns
58
32
1480
160
18
pF
nC
V
D S
=4 8 0 V, I
D
=7 A
V
GS
=1 0 V
-
-
-
t
d (o n)
t
r
t
d (o ff)
t
f
C
C
C
i ss
V
DD
=300V,I
D
=7A
V
GS
=10V, R
G
=25Ω
-
-
-
-
o ss
V
D S
=2 5 V, V
GS
=0 V
f=1 .0 MH
Z
-
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
I
S
=7 A , V
GS
=0 V
V
GS
=0 V, I
F
=7 A
d i /d t=1 0 0 A /us
-
-
-
-
-
-
-
-
365
3 .4
7 .0
28
1 .4
-
-
A
A
V
ns
uC
Ma x.P uls e d S o urc e C urre nt
D i o d e F o rwa rd Vo lta g e
Re ve rs e Re c o ve ry Ti me
Re ve rs e Re c o ve ry C ha rg e
NOTE :
Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
March 31,2010-REV.00
PAGE . 2
PJP7N60 / PJF7N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
I
D
- Drain-to-Source Current (A)
I
D
- Drain Source Current (A)
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 20V~ 6.0V
100
V
DS
=50V
10
T
J
= 125
o
C
25
o
C
0.1
-55
o
C
1
5.0V
0.01
1
2
3
4
5
6
7
V
GS
- Gate-to-Source Voltage (V)
8
Fig.1 Output Characteristric
3
R
DS(ON)
- On Resistance(Ω)
Ω
R
DS(ON)
- On Resistance(Ω)
Ω
2.5
2
5
Fig.2 Transfer Characteristric
I
D
=3.5A
4
3
2
T
J
=25
o
C
1.5
V
GS
=10V
1
V
GS
= 20V
0.5
0
0
2
1
0
4
8 10 12 14 16 18 20
I
D
- Drain Current (A)
6
3
4
5
6
7
8
9
V
GS
- Gate-to-Source Voltage (V)
10
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
C - Capacitance (pF)
V
GS
=10 V
I
D
=3.5A
2000
1600
Ciss
1200
800
400
0
Crss
0
5
10
15
20
25
30
f = 1MHz
V
GS
= 0V
Coss
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature
(
o
C)
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
March 31,2010-REV.00
Fig.6 Capacitance
PAGE. 3
PJP7N60 / PJF7N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
V
GS
- Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
0
4
8
12
16
Q
g
- Gate Charge (nC)
20
100
V
DS
=480V
V
DS
=300V
V
DS
=120V
I
S
- Source Current (A)
I
D
=7.0A
V
GS
= 0V
10
T
J
= 125
o
C
25
o
C
0.1
-55
o
C
1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
BV
DSS
- Breakdown Voltage(Normalized)
1.2
I
D
= 250µA
1.1
1
0.9
0.8
-50 -25 0
25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
Fig.9 Breakdown Voltage vs Junction Temperature
March 31,2010-REV.00
PAGE. 4
PJP7N60 / PJF7N60
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
March 31,2010-REV.00
PAGE . 5
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