PJP1N80 / PJU1N80
800V N-Channel Enhancement Mode MOSFET
FEATURES
• 1A, 800V, R
DS(ON)
=16Ω@V
GS
=10V, I
D
=0.5A
•
•
•
•
•
•
Low ON Resistance
Fast Switching
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charge and SMPS
In compliance with EU RoHs 2002/95/EC Directives
TO-220AB/TO-251
TO-220AB
TO-251
3
2
3
1
2 D S
1
G
G
1
D
2
2
S
3
3
MECHANICAL DATA
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERINGINFORMATION
TYPE
PJP1N80
PJU1N80
MARKING
P1N80
U1N80
PACKAGE
TO-220AB
TO-251
PACKING
50PCS/TUBE
80PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA ME TE R
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng fa c to r
T
A
=2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
E
AS
R
θJ
C
R
θJ
A
P J P 1 N8 0
800
+3 0
1
4
45
0 .3 6
P J U1 N8 0
Uni ts
V
V
1
4
31
0 .2 5
A
A
W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0
9 .8
2 .7 8
6 2 .5
4
100
O
C
Avalanche Energy with Single Pulse
I
AS
=1.4A, VDD=50V, L=10mH
mJ
C /W
C /W
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
Note: 1. Maximum DC current limited by the package
O
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009
PAGE . 1
PJP1N80 / PJU1N80
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V
D SS
V
GS (th)
R
D S (o n)
I
DSS
I
GS S
V
GS
=0 V, I
D
=2 5 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
= 10V, I
D
= 0.5A
V
DS
=
8
00V, V
GS
=0V
V
GS
=+3 0 V, V
D S
=0 V
800
3 .1
-
-
-
-
-
13.5
-
-
-
4 .4
16
10
+1 0 0
V
V
Ω
uA
nΑ
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tra ns fe r
C a p a c i ta nc e
Q
g
Q
gs
Q
gd
-
6 .8
1 .3
3.1
11.4
14.3
3 6 .7
1 5 .7
160
15
1.35
-
-
-
-
-
ns
-
-
200
19
1.75
pF
nC
V
D S
=
6 4 0
V, I
D
=
0 .8
A
V
GS
=1 0 V
-
-
-
t
d (o n)
t
r
t
d (o ff)
t
f
C
C
C
i ss
V
DD
=
4
00V, I
D
=
0.8
A
V
GS
=10V , R
G
=
25
Ω
-
-
-
-
o ss
V
D S
=2 5 V, V
GS
=0 V
f=1 .0 MH
Z
-
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
I
S
=1 A , V
GS
=0 V
V
GS
=0 V, I
F
=
1
A
d i /d t=1 0 0 A /us
-
-
-
-
-
-
-
-
160
0 .3
1 .0
4 .0
1 .5
-
-
A
A
V
ns
uC
Ma x.P uls e d S o urc e C urre nt
D i o d e F o rwa rd Vo lta g e
Re ve rs e Re c o ve ry Ti me
Re ve rs e Re c o ve ry C ha rg e
NOTE :
Plus Test: Pluse Width < 300us, Duty Cycle < 2%.
STAD-NOV.24.2009
PAGE . 2
℃
PJP1N80 / PJU1N80
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
I
D
- Drain Source Current (A)
I
D
- Drain-to-Source Current (A)
1.4
1.2
1
0.8
0.6
0.4
V
GS
= 20.0V ~ 7.0V
V
DS
=40V
1
6.0V
0.1
T
J
= 125
o
C
25
o
C
-55
o
C
5.0V
0.2
0
0
5
10
15
20
25
30
0.01
2
3
4
5
6
7
8
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
R
DS(ON)
- On-Resistance (Ω )
Ω
22
R
DS(ON)
- On-Resistance (Ω )
Ω
20
18
16
14
12
10
V
GS
=10V
24
22
20
18
16
14
12
I
D
=1A
V
GS
= 20V
T
J
= 25
o
C
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
I
D
- Drain Current (A)
0
5
10
15
20
25
30
V
GS
- Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
2.2
300
C - Capacitance (pF)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
=10 V
I
D
=0.5A
250
200
150
100
50
0
0
Crss
5
10
15
20
Coss
f = 1MHz
V
GS
= 0V
Ciss
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
25
30
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
STAD-NOV.24.2009
Fig.6 Capacitance
PAGE. 3
PJP1N80 / PJU1N80
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
V
GS
- Gate-to-Source Voltage
(V)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
V
DS
=640V
V
DS
=400V
V
DS
=160V
10
I
S
- Source Current (A)
I
D
=0.8A
V
GS
= 0V
1
T
J
= 125
o
C
25
o
C
-55
o
C
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
- Gate Charge (nC)
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
1.2
Fig.8 Source-Drain Diode Forward Voltage
BV
DSS
- Breakdown Voltage(NORMALIZED)
I
D
= 250µA
1.1
1
0.9
0.8
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-NOV.24.2009
PAGE. 4
PJP1N80 / PJU1N80
LEGAL STATEMENT
Copyright PanJit International, Inc
2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-NOV.24.2009
PAGE . 5
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