PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 650V, R
DS(ON)
=1.0Ω@V
GS
=10V, I
D
=5.0A
•
•
•
•
•
•
Low ON Resistance
Fast Switching
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charge and SMPS
In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
3
S
2
1
D
G
3
S
12
D
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2
Drain
ORDERING INFORMATION
1
TYPE
PJP10N65
PJF10N65
MARKING
P10N65
F10N65
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
3
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T
A
=2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
E
AS
R
θJ
C
R
θJ
A
P J P 1 0 N6 5
P J F 1 0 N6 5
Uni ts
V
V
650
+3 0
10
40
156
1 .2 5
10
40
50
0 .4
A
A
W
O
Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e
-5 5 to +1 5 0
750
0 .8
6 2 .5
2 .5
100
O
C
Avalanche Energy with Single Pulse
I
AS
=10A, VDD=90V, L=13m
Η
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
mJ
C /W
C /W
O
Note :
1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
PAGE . 1
PJP10N65 / PJF10N65
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V
D SS
V
GS (th)
R
D S (o n)
I
DSS
I
GS S
V
GS
=0 V, I
D
=2 5 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
= 10V, I
D
=
5.0
A
V
DS
=6
5
0V, V
GS
=0V
V
GS
=+3 0 V, V
D S
=0 V
650
2 .0
-
-
-
-
-
0.85
-
-
-
4 .0
1.0
10
+1 0 0
V
V
Ω
uA
nΑ
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tra ns fe r
C a p a c i ta nc e
Q
g
Q
gs
Q
gd
-
3 8 .6
8 .4
9.8
14.8
22.6
4 8 .2
2 6 .8
1450
120
12
52
-
-
22
36
ns
90
42
2020
165
16
pF
nC
V
D S
=
5 2 0
V, I
D
=
1 0
A ,
V
GS
=1 0 V
-
-
-
t
d (o n)
t
r
t
d (o ff)
t
f
C
C
C
i ss
V
DD
=325V, I
D
=
10
A
V
GS
=1 0 V, R
G
=25Ω
-
-
-
-
o ss
V
D S
=2 5 V, V
GS
=0 V
f=1 .0 MH
Z
-
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
I
S
=
1 0
A , V
GS
=0 V
V
GS
=0 V, I
F
=
1 0
A
d i /d t=1 0 0 A /us
-
-
-
-
-
-
-
-
450
4 .2
10
40
1 .4
-
-
A
A
V
ns
uC
Ma x.P uls e d S o urc e C urre nt
D i o d e F o rwa rd Vo lta g e
Re ve rs e Re c o ve ry Ti me
Re ve rs e Re c o ve ry C ha rg e
NOTE :
Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
STAD-DEC.25.2009
PAGE . 2
PJP10N65 / PJF10N65
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
I
D
- Drain-to-Source Current (A)
16
14
12
10
8
6
4
2
0
V
GS
= 20V~ 6.0V
I
D
- Drain Source Current (A)
20
18
100
V
DS
=50V
10
T
J
= 125
o
C
25
o
C
5.0V
1
0.1
-55
o
C
0.01
0
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
5
1
2
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
8
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
R
DS(ON)
- On Resistance(Ω)
Ω
2
R
DS(ON)
- On Resistance(Ω)
Ω
1.6
1.2
V
GS
=10V
0.8
V
GS
= 20V
0.4
0
0
4
8
12
16
20
4
3.5
3
I
D
=5.0A
2.5
2
T
J
=25
o
C
1.5
1
0.5
0
3
4
I
D
- Drain Current (A)
5
6
7
8
9
V
GS
- Gate-to-Source Voltage (V)
10
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
2.5
R
DS(ON)
- On-Resistance(Normalized)
2500
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
C - Capacitance (pF)
V
GS
=10 V
I
D
=5.0A
2000
f = 1MHz
V
GS
= 0V
Ciss
1500
1000
500
Coss
Crss
0
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
T
J
- Junction Temperature
(
o
C)
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
STAD-DEC.25.2009
Fig.6 Capacitance
PAGE. 3
PJP10N65 / PJF10N65
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
V
GS
- Gate-to-Source Voltage (V)
12
100
10
8
6
4
2
0
0
4
8
V
DS
=520V
V
DS
=325V
V
DS
=130V
I
S
- Source Current (A)
I
D
=10A
V
GS
= 0V
10
T
J
= 125
o
C
25
o
C
-55
o
C
1
0.1
0.01
12 16 20 24 28 32 36 40
Q
g
- Gate Charge (nC)
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
BV
DSS
- Breakdown Voltage(Normalized)
1.2
I
D
= 250µA
1.1
1
0.9
0.8
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (
o
C)
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-DEC.25.2009
PAGE. 4
PJP10N65 / PJF10N65
LEGAL STATEMENT
Copyright PanJit International, Inc
2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-DEC.25.2009
PAGE . 5
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