PJP8N60 / PJF8N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 8A , 600V, R
DS(ON)
=1.2Ω@V
GS
=10V, I
D
=4.0A
•
•
•
•
•
•
Low ON Resistance
Fast Switching
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charge and SMPS
In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
1
2
G
3
D
S
1
2
G
3
S
D
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJP8N60
PJF8N60
MARKING
P8N60
F8N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
Gate
50PCS/TUBE
50PCS/TUBE
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA ME TE R
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T
A
=2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
E
AS
R
θJ
C
R
θJ
A
P J P 8 N6 0
600
+3 0
8
32
125
1 .0
P J F 8 N6 0
Uni ts
V
V
8
32
45
0 .3 9
A
A
W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0
500
1
6 2 .5
2 .7 8
100
O
C
Avalanche Energy with Single Pulse
I
AS
=8.0A, VDD=50V, L=15.6mH
mJ
C /W
C /W
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
Note: 1. Maximum DC current limited by the package
O
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
May 10,2010-REV.01
PAGE . 1
PJP8N60 / PJF8N60
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V
D SS
V
GS (th)
R
D S (o n)
I
DSS
I
GS S
V
GS
=0 V, I
D
=2 5 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
= 10V, I
D
=
4.0
A
V
DS
=600V, V
GS
=0V
V
GS
=+3 0 V, V
D S
=0 V
600
2 .0
-
-
-
-
-
1.0
-
-
-
4 .0
1.2
10
+1 0 0
V
V
Ω
uA
nΑ
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tra ns fe r
C a p a c i ta nc e
Q
g
Q
gs
Q
gd
-
2 2 .8
5 .6
7.6
13.2
18.4
4 6 .8
2 0 .8
11 6 5
108
10
-
-
-
18
32
ns
65
30
1480
160
18
pF
nC
V
D S
=4 8 0 V, I
D
=
8
A
V
GS
=1 0 V
-
-
-
t
d (o n)
t
r
t
d (o ff)
t
f
C
C
C
i ss
V
DD
=300V,I
D
=
8
A
V
GS
=10V, R
G
=25Ω
-
-
-
-
o ss
V
D S
=2 5 V, V
GS
=0 V
f=1 .0 MH
Z
-
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
I
S
=
8
A , V
GS
=0 V
V
GS
=0 V, I
F
=
8
A
d i /d t=1 0 0 A /us
-
-
-
-
-
-
-
-
350
3 .2
8 .0
32
1 .4
-
-
A
A
V
ns
uC
Ma x.P uls e d S o urc e C urre nt
D i o d e F o rwa rd Vo lta g e
Re ve rs e Re c o ve ry Ti me
Re ve rs e Re c o ve ry C ha rg e
NOTE:
Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
May 10,2010-REV.01
PAGE . 2
PJP8N60 / PJF8N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
I
D
- Drain-to-Source Current (A)
14
12
10
8
6
4
2
0
0
V
GS
= 20V~ 6.0V
I
D
- Drain Source Current (A)
16
100
V
DS
=50V
10
T
J
= 125
o
C
25
o
C
0.1
-55
o
C
5.0V
1
0.01
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
1
2
3
4
5
6
7
V
GS
- Gate-to-Source Voltage (V)
8
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
R
DS(ON)
- On Resistance(Ω)
Ω
3
R
DS(ON)
- On Resistance(Ω)
Ω
4
I
D
=4.0A
3
2.5
2
1.5
1
V
GS
=10V
V
GS
= 20V
2
T
J
=25
o
C
1
0.5
0
0
0
4
8
12
16
I
D
- Drain Current (A)
20
3
4
5
6
7
8
9
10
V
GS
- Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
2.8
2.4
2
1.6
1.2
0.8
0.4
-50 -25 0
25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
V
GS
=10 V
I
D
=4.0A
2000
f = 1MHz
V
GS
= 0V
C - Capacitance (pF)
1600
1200
Ciss
800
C
C
C
400
Coss
Crss
0
5
10
15
20
25
30
0
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
May 10,2010-REV.01
Fig.6 Capacitance
PAGE. 3
PJP8N60 / PJF8N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
12
V
GS
- Gate-to-Source Voltage (V)
100
V
DS
=480V
V
DS
=300V
V
DS
=120V
10
8
6
4
2
0
0
5
I
S
- Source Current (A)
I
D
=8A
V
GS
= 0V
10
T
J
= 125
o
C
1
-55
o
C
25
o
C
0.1
0.01
10
15
20
Q
g
- Gate Charge (nC)
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
BV
DSS
- Breakdown Voltage(Normalized)
1.2
I
D
= 250µA
1.1
1
0.9
0.8
-50 -25
0
25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
Fig.9 Breakdown Voltage vs Junction Temperature
May 10,2010-REV.01
PAGE. 4
PJP8N60 / PJF8N60
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
May 10,2010-REV.01
PAGE . 5
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