PJP840 / PJF840
500V N-Channel Enhancement Mode MOSFET
FEATURES
• 8A , 500V, R
DS(ON)
=0.9Ω@V
GS
=10V, I
D
=4A
•
•
•
•
•
•
Low ON Resistance
Fast Switching
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charge and SMPS
In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
1
2
G
3
D
S
1
2
G
3
D
S
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJP840
PJF840
MARKING
P840
F840
PACKAGE
TO-220AB
ITO-220AB
PACKING
Gate
50PCS/TUBE
50PCS/TUBE
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA ME TE R
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T
A
=2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
E
AS
R
θJ
C
R
θJ
A
PJP840
500
+3 0
8
32
125
1 .0
PJF840
Uni ts
V
V
8
32
45
0 .3 6
A
A
W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0
514
1 .0
6 2 .5
2 .7 8
100
O
C
Avalanche Energy with Single Pulse
I
AS
=8.0A, VDD=72V, L=14mH
mJ
C /W
C /W
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
Note: 1. Maximum DC current limited by the package
O
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
November 24,2009-REV.00
PAGE . 1
PJP840 / PJF840
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V
D SS
V
GS (th)
R
D S (o n)
I
DSS
I
GS S
V
GS
=0 V, I
D
=2 5 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
= 10V, I
D
= 4A
V
DS
=500V, V
GS
=0V
V
GS
=+3 0 V, V
D S
=0 V
500
2 .0
-
-
-
-
-
0.62
-
-
-
4 .0
0.9
10
+1 0 0
V
V
Ω
uA
nΑ
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tra ns fe r
C a p a c i ta nc e
Q
g
Q
gs
Q
gd
-
3 1 .5
5 .9
13.4
18.8
32.6
8 4 .8
4 5 .2
11 0 0
115
7.8
-
-
-
26
42
ns
11 0
60
1360
150
10
pF
nC
V
D S
=4 0 0 V, I
D
=8 A
V
GS
=1 0 V
-
-
-
t
d (o n)
t
r
t
d (o ff)
t
f
C
C
C
i ss
V
DD
=250V , I
D
=8A
V
GS
=10V , R
G
=25Ω
-
-
-
-
o ss
V
D S
=2 5 V, V
GS
=0 V
f=1 .0 MH
Z
-
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
I
S
=8 A , V
GS
=0 V
V
GS
=0 V, I
F
=8 A
d i /d t=1 0 0 A /us
-
-
-
-
-
-
-
-
270
1 .8 9
8 .0
32
1 .5
-
-
A
A
V
ns
uC
Ma x.P uls e d S o urc e C urre nt
D i o d e F o rwa rd Vo lta g e
Re ve rs e Re c o ve ry Ti me
Re ve rs e Re c o ve ry C ha rg e
NOTE :
Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
November 24,2009-REV.00
PAGE . 2
PJP840 / PJF840
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
I
D
- Drain-to-Source Current (A)
I
D
- Drain Source Current (A)
20
18
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V
GS
= 20V~ 7.0V
V
DS
=50V
10
6.0V
T
J
= 125
o
C
1
25
o
C
-55
o
C
5.0V
0.1
2
3
4
5
6
7
8
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
1
R
DS(ON)
- On Resistance(Ω)
Ω
1.2
R
DS(ON)
- On Resistance(Ω)
Ω
0.9
0.8
VGS=10V
0.7
0.6
0.5
0
2
4
6
8
10
V
GS
= 20V
1.1
1
0.9
0.8
0.7
0.6
0.5
2
T
J
=25
o
C
I
D
=4A
I
D
- Drain Current (A)
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
2000
C - Capacitance (pF)
V
GS
=10 V
I
D
=4.0A
1600
1200
800
400
0
Crss
0
5
10
15
20
Ciss
f = 1MHz
V
GS
= 0V
Coss
-50
-25
0
25
50
75
100
125
150
25
30
T
J
- Junction Temperature
(
o
C)
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
November 24,2009-REV.00
Fig.6 Capacitance
PAGE. 3
PJP840 / PJF840
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
100
V
GS
- Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
I
D
=8A
V
DS
=400V
V
DS
=250V
V
DS
=100V
I
S
- Source Current (A)
V
GS
= 0V
10
T
J
= 125
o
C
1
25
o
C
-55
o
C
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
- Gate Charge (nC)
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
1.2
Fig.8 Source-Drain Diode Forward Voltage
B
VDSS
- Breakdown Voltage(NORMALIZED)
I
D
= 250µA
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
November 24,2009-REV.00
PAGE. 4
PJP840 / PJF840
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
November 24,2009-REV.00
PAGE . 5
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