PJ4812
30V N-Channel Enhancement Mode MOSFET
SOIC-08
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@8A=17mΩ
• R
DS(ON)
, V
GS
@5.0V,I
DS
@6A=34mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: SOIC-08 Package
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : 4812
PIN Assignment
8
7
6
5
1
2
3
4
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5. Drain 2
6. Drain 2
7. Drain 1
8. Drain 1
ABSOLUTE MAXIMUM RATINGS (T
C
=25
o
C unless otherwise noted )
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continous Drain Current
Pulsed Drain Current
(1)
Avalanche Energy
L=0.1mH,I
D
=8A,V
DD
=25V
Power Dissipation
T
C
=25
o
C
T
C
=75
o
C
T
C
=25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J
,T
STG
R
ΘJA
VALUE
30
+20
8
32
3.2
2.4
1.2
-55 to +175
62.5
UNIT
V
V
A
A
mJ
W
Operating Junction and Stroage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB Mounted)
2
Note :
1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
o
C
o
C/W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
December 01.2009-REV.00
PAGE . 1
PJ4812
E L E C T R IC A L C H A R A C T E R IS TIC S ( T
C
= 2 5
o
C , U n l e s s O t h e r w i s e N o t e d )
PA RA M E TE R
S YM B O L
T E S T C O N D IT IO N S
M IN .
T YP.
MAX.
U N IT
S TA T IC
D r a i n- S o ur c e B r e a k d o wn Vo lta g e
V
(BR)D S S
V
GS (TH)
V
GS
= 0 V, I
V
D S
= V
GS
, I
D
=25 0
µ
A
D
=250
µ
A
D
=8A
D
=6 A
30
1
-
-
-
-
-
8
10
-
-
15
26
-
-
-
-
-
-
3
17
34
+10 0
1
25
-
-
V
V
m
Ω
m
Ω
nA
µ
A
µ
A
A
S
G a t e Thr e s ho ld Vo lt a g e
D r a i n - S o ur c e O n- s t a t e
R e s i s t a nc e
Gate-B ody Leakage
Ze ro Ga te Vo lta g e D ra i n
C ur r e n t
O n- S t a t e D r a i n C u r r e nt
F o r w a r d Tr a n s c o n d u c t a n c e
V
GS
= 1 0 V, I
R
D S ( ON)
V
GS
= 5 V,I
I
GS S
V
D S
= 0 V , V
GS
= + 2 0 V
V
DS
= 2 4 V, V
GS
= 0 V
I
DSS
V
D S
= 2 4 V , V
GS
= 0 V , T
J
= 1 2 5
o
C
I
D ( ON)
V
DS
= 1 0 V,V
GS
= 1 0 V
V
DS
= 5 V,I
D
=8 A
g fs
D YN A M IC
V
D S
= 1 5 V , V
GS
= 5 V , I
To t a l G a t e C h a r g e
Q
G
D
=8A
-
-
7.0
1 4.2
1 .22
3.44
7.8
11 . 6
28 .8
5.6
520
11 2
98
2.0
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
Ω
G a t e -S o ur c e C ha rg e
G a t e -D r a i n C ha rg e
Tu r n - O n D e l a y Ti m e
R i s e Ti m e
Tu r n - O f f D e l a y Ti m e
F a l l Ti m e
Inp u t C a p a c i t a nc e
O ut p u t C a p a c i t a n c e
R e v e r s e Tr a n s f e r C a p a c i t a n c e
G a t e R e s i s ta nc e
Q
GS
Q
GD
td (o n)
tr
td (off)
tf
C
IS S
C
OS S
C
RSS
Rg
V
D S
= 1 5 V , V
GS
= 1 0 V
I
D
=8A
-
-
-
V
D S
= 1 5 V , I
D
= 1 A , V
GS
= 1 0 V
R
GS
= 6
Ω
-
-
-
-
V
GS
= 0 V , V
D S
= 1 5 V
f=1 MHz
-
-
V
GS
= 1 5 m V , V
D S
= 0 V , f = 1 M H z
-
S O U R C E - D R A IN D IO D E R A T IN G S A N D C H A R A C T E R IS T IC S
C o n t i n u o us C u r r e n t
F o rwa rd Vo lta g e
I
S
-
I
F
= 2 . 3 A , V
GS
= 0 V
-
-
2.3
1.2
A
V
V
SD
-
NOTE :
Plus Test: Pluse Width < 300us, Duty Cycle < 2%
.
Switching
Test Circuit
V
IN
V
DD
Gate Charge
Test Circuit
V
GS
V
OUT
V
DD
R
L
R
L
R
G
1mA
R
G
December 01.2009-REV.00
PAGE . 2
PJ4812
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
I
D
- Drain-to-Source Current (A)
40
I
D
- Drain Source Current (A)
V
GS
= 10V, 6V
40
5.0V
30
V
DS
=10V
30
4.5V
20
20
T
J
= 125
o
C
4.0V
10
3.5V
3.0V
10
25
o
C
-55
o
C
0
0
1
2
3
4
5
0
1.5
V
DS
- Drain-to-Source Voltage (V)
2
2.5
3
3.5
4
V
GS
- Gate-to-Source Voltage (V)
4.5
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
R
DS(ON)
- On-Resistance (mΩ )
Ω
R
DS(ON)
- On-Resistance (mΩ )
Ω
60
50
40
30
20
10
0
VGS=10.0V
V
GS
= 5.0V
90
80
70
60
50
40
30
20
10
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
T
J
=25
o
C
125
o
C
I
D
=8A
0
10
20
30
40
I
D
- Drain Current (A)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
1.8
1.6
1.4
1.2
1
1000
C - Capacitance (pF)
V
GS
=10 V
I
D
=8.0A
800
600
400
200
Crss
0
0
5
10
15
Coss
Ciss
f = 1MHz
V
GS
= 0V
0.8
0.6
-50
-25
0
25
50
75
100
125 150
20
25
T
J
- Junction Temperature
(
o
C)
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
December 01.2009-REV.00
Fig.6 Capacitance
PAGE. 3
PJ4812
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
10
V
GS
- Gate-to-Source Voltage (V)
8
6
4
2
0
0
4
8
12
16
100
I
S
- Source Current (A)
V
DS
=15 V
I
D
=8.0A
V
GS
= 0V
10
T
J
= 125
o
C
-55
o
C
1
0.1
25
o
C
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
- Gate Charge (nC)
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
36
35
34
33
32
31
30
29
Fig.8 Source-Drain Diode Forward Voltage
V
th
- G-S Threshold Voltage (Normalized)
BV
DSS
- Breakdown Voltage (V)
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100 125 150
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
T
J
- Junction Temperature (
o
C)
Fig.10 Threshold Voltage vs Junction Temperature
December 01.2009-REV.00
P
AGE. 4
PJ4812
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 3K per 13" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
December 01.2009-REV.00
PAGE . 5
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