MMDT2222A
DUAL SURFACE MOUNT NPN TRANSISTORS
This device contains two electrically-isolated 2N2222A NPN transistors.
The two transistors have well matched hFE and are encapsulated in an
ultra-small SOT-363 (SC70-6L) package. This device is ideal for portable
applications where board space is at a premium.
4
5
6
2
1
3
SOT- 363
FEATURES
Electrically Isolated Dual NPN Switching Transistor
In compliance with EU RoHS 2002/95/EC directives
6
5
4
APPLICATIONS
General Purpose Amplifier Applications
Hand-Held Computers, PDAs
Device Marking Code: M2A
1
2
3
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation (Note 1)
T
J
= 25°C Unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Value
75
40
6.0
600
200
-55 to +150
-55 to +150
Units
V
V
V
mA
mW
°C
°C
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
R
thja
Value
625
Units
°C/W
Note 1.
FR-4 board 60 x 70 x 1mm
with minimum recommended pad layout
1/19/2009
Page 1
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MMDT2222A
ELECTRICAL CHARACTERISTICS (Each Transistor)
T
J
= 25°C Unless otherwise noted
Parameter
Symbol
Conditions
Min
40
75
6.0
-
-
35
50
75
50
100
40
35
-
-
0.6
-
300
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
10
20
-
-
-
-
300
-
-
0.3
1.0
1.2
2.0
-
8.0
25
10
25
225
60
V
V
V
MHz
pF
pF
ns
ns
ns
ns
-
Units
V
V
V
nA
nA
Collector-Emitter Breakdown Voltage V
(BR)CEO
I
C
= 10mA
Collector-Base Breakdown Voltage V
(BR)CBO
I
C
= 10uA
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)EBO
I
E
= 10uA
I
CEX
I
BL
V
CE
= 60V, V
EB
= 3.0V
V
CE
= 60V, V
EB
3.0V
=
I
C
= 0.1mA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
DC Current Gain (Note 2)
h
FE
I
C
=10mA, V
CE
=10V, T
J
=-55C
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 1.0V
Collector-Emitter Saturation
Voltage (Note 2)
Base-Emitter Saturation Voltage
(Note 2)
Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(SAT)
V
BE(SAT)
f
T
C
CBO
C
EBO
t
d
t
r
t
s
t
f
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 20V, I
C
= 20mA
f = 100MHz
V
CB
= 10V, f =1.0MHz
V
EB
= 0.5V, f =1.0MHz
V
CC
= 30V, I
C
=150mA
V
BE
(off) = -0.5V, I
B1
= 15mA
V
CC
= 30V, I
C
=150mA
I
B1
= I
B2
= 15mA
Note 2. Short duration test pulse used to minimize self-heating
1/14/2009
Page 2
www.panjit.com
MMDT2222A
CHARACTERISTICS CURVES (Each Transistor)
T
J
= 25°C Unless otherwise noted
350
300
250
T
J
= 100° C
T
J
= 150° C
0.8
0.7
0.6
0.5
T
J
= 100° C
T
J
= 150° C
T
J
= 25° C
V
BE
(on)
200
h
FE
150
100
50
0
0.1
1
T
J
= 25° C
0.4
0.3
0.2
0.1
0.0
V
CE
= 10V
V
CE
= 10V
10
100
1000
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 1. hFE vs. Ic
1.2
T
J
= 150 °C
Fig. 2. VBE vs. Ic
500
450
400
350
V
CE
(sat) (mV)
300
250
200
150
100
50
0
0.1
1
10
100
1000
Collector Current, I
C
(mA)
1.0
0.8
V
BE
(sat) (V)
I
C
/I
B
= 10
I
C
/I
B
= 10
T
J
= 25 °C
0.6
T
J
= 150 °C
0.4
0.2
T
J
= 25 °C
T
J
= 100 °C
0.0
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Fig. 3. VCE(sat) vs. Ic
Fig. 4. VBE(sat) vs. Ic
100
f=1 MHz
Capacitance (pF
C
IB
(EB)
10
C
OB
(CB)
1
0.1
1
10
100
Reverse Voltage, V
R
(V)
Fig. 5. Capacitances
1/14/2009
Page 3
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MMDT2222A
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
MMDT2222A T/R7 - 3,000 units per 7 inch reel
MMDT2222A T/R13 -10,000 units per 13 inch reel
Copyright PanJit International, Inc 2009
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation
herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
system s. Pan Jit does not convey any license under its patent rights or rights of others.
1/14/2009
Page 4
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