DATA SHEET
MMBT4401W
W
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
40 Volts
POWER
225mW
SOT-323
Unit: inch (mm)
FEATURES
NPN epitaxial silicon, planar design
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
Collector current IC = 600mA
In compliance with EU RoHS 2002/95/EC directives
.056(1.40)
.047(1.20)
.006(.15)
.002(.05)
.004(.10)MAX.
Case: SOT- 323
3
.016(.40)
.008(.20)
Terminals: Solderable per MIL-STD- 750, Method 2026
Approx Weight: 0.0048 gram
Marking: M4A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Value
UNIT
Collector - Emitter V
oltage
Collector - Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
V
CEO
V
CBO
V
EBO
I
C
40
60
6.0
600
.044(1.1)
.035(0.9)
MECHANICAL DATA
.087(2.2)
.078(2.0)
Collector-emitter voltage VCE = 40V
.004(.10)MIN.
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Storage Temperature
Junction Temperature
Thermal Resistance , Junction to Ambient
SYMBOL
Value
UNIT
P
TOT
T
STG
T
J
R
θJ A
225
-55 to 150
-55 to 150
556
mW
℃
℃
℃/W
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
REV.0.1-MAR.4.2009
PAGE .
1
ELECTRICAL CHARACTERISTICS (T
J
= 25°C, unless otherwise noted)
PARAMETER
SYMBOL
Test Condition
MIN.
TYP.
MAX.
UNIT
Collector - Emitter Breakdown V
oltage
Collector - Base Breakdown V
oltage
Emitter - Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
V
(BR)
CEO I
C
=1.0mA, I
B
=0
V
(BR)
CBO I
C
=100uA, I
E
=0
V
(BR)
EBO I
E
=100uA, I
C
=0
I
BL
I
CEX
V
CE
=35V, V =0.4V
EB
V
CE
=35V, V =0.4V
EB
I
C
=0.1mA, V
CE
=1.0V
I
C
=1.0mA, V
CE
=1.0V
40
60
6.0
-
-
20
40
80
100
40
-
-
0.75
-
-
-
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
100
-
-
-
300
-
0.4
V
V
V
nA
nA
DC Current Gain
h
FE
I
C
=10mA, V
CE
=1.0V
I
C
=150mA, V
CE
=1.0V
I
C
=500mA, V
CE
=2.0V
Collector - Emitter Saturation Voltage
V
CE(SAT)
I
C
=150mA, I
B
=15 mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CB
=5V, I
E
=0, f=1MHz
V
CB
=0.5V, I
C
=0, f=1MHz
I
C
=20mA, V
CE
=10V,
f=100MHz
V
CC
=30V, V
BE
=2.0V,
I
C
=150mA, I
B
=15mA
V
CC
=30V, V
BE
=2.0V,
I
C
=150mA, I
B1
=15mA
V
CC
=30V, I
C
=150mA,
I
B1
=I
B2
=15mA
V
CC
=3V, I
C
=10mA,
I
B1
=I
B2
=15mA
V
0.75
0.95
V
1.2
6.5
30
-
pF
pF
MHz
Base - Emitter Saturation Voltage
Collector - Base Capacitance
Emitter - Base Capacitance
Current Gain – Bandwidth Product
V
BE(SAT)
C
CBO
C
EBO
F
T
Delay Time
t
d
-
-
15
ns
Rise Time
t
r
-
-
20
ns
Storage Time
t
s
-
-
225
ns
Fall Time
t
f
-
-
30
ns
ELECTRICAL CHARACTERISTICS CURVES
All Curves TBD
REV.0.1-MAR.4.2009
PAGE .
2
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-MAR.4.2009
PAGE . 3
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