MMBT5401
HIGH VOLTAGE TRANSISTOR
PNP Silicon
FEATURES
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case : SOT-23 plastic case.
• Terminals : Solderable per MIL-STD-750,Method 2026
• Standard packaging : 8mm tape
• Weight : approximately 0.008gram
• Marking : M5A
MAXIMUM RATINGS
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
VALUE
-150
-160
-5.0
-500
UNITS
V dc
V dc
V dc
mAdc
Maximum ratings are those values beyound which device damage can occur. Maximum ratings applied to the device are individual stress
limit values (not normal operating conditions) and are not valid simultaneously.If these limits are exceeded, device functional operational
is not implied, damage may occur and reliability may be affected.
PNP
Fig.35
REV.0.0-OCT.20.2008
PAGE . 1
MMBT5401
THERMAL CHARACTERISTICS
CHARACTERISTIC
Total Device Dissipation
FR-4 Board (Note 1)
T
A
=25
o
C
Derate Above 25
o
C
Thermal Resistance,
Junction-to-Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
=25
o
C
Derate Above 25
o
C
Thermal Resistance
Junction-to-Ambient
Junction and Storage Temperature
1.FR-4 = 70 X 60 X 1mm
2.Alumina = 0.4 X 0.3 X 0.024 in 99.5% alumina
SYMBOL
MAX
225
UNITS
mW
P
D
1.8
R
ΘJA
556
300
P
D
2.4
R
ΘJA
T
J
,T
STG
417
-55 to +150
mW/
o
C
o
mW/
o
C
o
C/W
mW
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted)
CHARACTERISTIC
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
=-1.0mAdc,I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100
µ
Adc,I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-10
µ
Adc,I
C
=0)
Collector Cutoff Current
(V
CB
=-120Vdc, I
E
=0)
(V
CB
=-120Vdc, I
E
=0, T
A
=100
o
C)
ON CHARACTERISTICS
DC Current Gain
(I
C
=-1.0mAdc, V
CE
=-5.0Vdc)
(I
C
=-10mAdc, V
CE
=-5.0Vdc)
(I
C
=-50mAdc, V
CE
=-5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-10mAdc, I
B
=-1.0mAdc)
(I
C
=-50mAdc, I
B
=-5.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=-10mAdc, I
B
=-1.0mAdc)
(I
C
=-50mAdc, I
B
=-5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(I
C
=-10mAdc, V
CE
=-10Vdc, f=100MHz)
Output Capacitance
(V
CB
=-10Vdc, I
E
=0, f=1.0MHz)
Small Signal Current Gain
(I
C
=-1.0mAdc, V
CE
=-10Vdc, f=1.0kHz)
Noise Figure
(I
C
=-200
µ
Adc, V
CE
=-5.0Vdc, Rs=10
Ω
, f=1.0kHz)
REV.0.0-OCT.20.2008
SYMBOL
MIN
MAX
UNITS
V(
BR
)
CEO
V(
BR
)
CBO
V(
BR
)
EBO
I
CES
-150
-160
-5.0
-
-
-
-
-
-50
-50
V dc
V dc
V dc
nAdc
µ
Adc
h
FE
50
60
50
-
-
-
-
-
240
-
-0.2
-0.5
-1.0
-1.0
-
V
CE(SAT)
V dc
V
BE(SAT)
V dc
f
T
C
OBO
h
FE
NF
100
-
40
-
300
6.0
200
8.0
MHz
pF
-
dB
PAGE . 2
MMBT5401
REV.0.0-OCT.20.2008
PAGE . 3
MMBT5401
REV.0.0-OCT.20.2008
PAGE . 4
MMBT5401
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2008
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.0-OCT.20.2008
PAGE . 5
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