ES1AW~ES1GW
SURFACE MOUNT SUPERFAST RECTIFIER
CURRENT
1.0 Amperes
VOLTAGE
50 to 400 Volts
FEATURES
•
•
•
•
•
•
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Superfast recovery times for high efficiency
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Glass passivated junction
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
•
•
•
•
•
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.0023 ounce, 0.0679 gram
.188(4.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA ME TE R
Ma xi mum Re c urre nt P e a k Re ve rs e Vo lta g e
Ma xi mum RM S Vo lta g e
Ma xi mum D C B lo c k i ng Vo lta g e
Ma xi mum A ve ra g e F o rwa rd C urre nt a t T
L
=1 0 5
O
C
P e a k F o rwa rd S urg e C urre nt : 8 .3 ms s i ng le ha lf s i ne -wa ve
s up e ri mp o s e d o n ra te d lo a d (J E D E C m e tho d )
Ma xi mum F o rwa rd Vo lta g e a t 1 .0 A
Ma xi mum D C Re ve rs e C urre nt a t Ra te d D C
B lo c k i ng Vo lta g e
Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 1 )
Typ i c a l J unc ti o n c a p a c i ta nc e (No te 2 )
Typ i c a l The rm a l Re s i s ta nc e (No te 3 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
T
J
= 2 5
O
C
T
J
=1 0 0
O
C
S YM B OL E S 1 AW
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
t
rr
C
J
R
θJ
L
T
J
,T
S TG
50
35
50
E S 1 B W E S 1 C W E S 1 D W E S 1 E W E S 1 GW UNITS
100
70
100
150
105
150
1 .0
30
0 .9 5
1 .0
10
30
7 .0
35
-5 5 to + 1 5 0
O
200
140
200
300
210
300
400
280
400
V
V
V
A
A
1 .2 5
V
μA
ns
pF
C / W
O
C
NOTES:
1.Reverse Recovery Tset Conditions:I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1.0MHz and applied reverse voltage of 4.0 volts.
3.8.0mm
2
( .013mm thick ) land areas.
June 10,2010-REV.01
PAGE . 1
ES1AW~ES1GW
10
10
I
F
, Forward Current (A)
I
F
, Forward Current (A)
50-200V
50-200V
1
300-400V
1
300-400V
T
J
=25°C
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.1
0.4
0.6
0.8
1
1.2
1.4
T
J
=150°C
1.6
1.8
2
V
F
, Forward Voltage (V)
V
F
, Forward Voltage (V)
Fig.1 Typical Forward Characteristics
40
1.20
Fig.2 Typical Forward Characteristics
I
F
, Forward Current (A)
0
10
20
30
40
35
1.00
0.80
0.60
0.40
0.20
0.00
0
25
50
75
100
125
150
C
J
, Junction
Capacitance (pF)
30
25
20
15
10
5
0
V
R
, Reverse Bias Voltage (V)
T
L
, Lead Temperature (°C)
Fig.3 Typical Junction Capacitance
10
Fig.4 Forward Current Derating Curve
I
R
, Leakage Current (uA)
T
J
= 125°C
1
0.1
T
J
= 25°C
0.01
0.001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig.5 Typical Reverse Characteristics
June 10,2010-REV.01
PAGE . 2
ES1AW~ES1GW
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 7.5K per 13" plastic Reel
T/R - 1.8Kper 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
June 10,2010-REV.01
PAGE . 3
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
