BC846AW ~ BC850CW
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 100mA
• In compliance with EU RoHS 2002/95/EC directives
0.087(2.20)
0.070(1.80)
0.004(0.10)MIN.
0.044(1.10)
0.035(0.90)
0.087(2.20)
0.078(2.00)
30/45/65 Volts
CURRENT
150 mWatts
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0001 ounce, 0.005 gram
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.004(0.10)MAX.
0.016(0.40)
0.008(0.20)
Device Marking:
BC846AW=46A
BC846BW=46B
BC847AW=47A
BC847BW=47B
BC848AW=48A
BC848BW=48B
BC849BW=49B
BC850BW=50B
BC847CW=47C BC848CW=48C
BC849CW=49C BC850CW=50C
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
BC846W
BC847W, BC850W
BC848W, BC849W
BC846W
BC847W, BC850W
BC848W, BC849W
BC846W
BC847W, BC850W
BC848W, BC849W
Symbol
V
CEO
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Units
V
Collector - Base Voltage
V
CBO
V
Emitter - Base Voltage
V
EBO
V
Collector Current - Continuous
I
C
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance
Junction Temperature
Storage Temperature
Symbol
P
TOT
R
θJA
R
θJC
T
J
T
STG
Value
150
400
100
-55 to 150
-55 to 150
Units
mW
O
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
December 17,2010-REV.00
PAGE . 1
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS
PA RA ME TE R
B C 8 4 6 AW,B W
B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W
B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W
B C 8 4 6 AW,B W
B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W
B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W
B C 8 4 6 AW,B W
B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W
B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W
S ym bo l
Te st C o nd i ti o n
MIN.
65
45
30
80
50
30
6.0
6.0
5.0
-
-
TYP.
MA X .
Uni ts
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e
V
(B R)
C E O IC =1 0 mA , IB =0
-
-
V
C o lle c to r - B as e B re a k d o wn Vo lta g e
V
(B R)
C B O IC =1 0
μA
, IE =0
-
-
V
E mi tte r - B a s e B re a k d o wn Vo lta g e
V
( B R)
E B O IE =1 0
μA
, IC =0
-
-
V
E mi tte r-B a s e C uto ff C urre nt
C o lle c to r-B a s e C uto ff C urre nt
D C C urre nt Ga i n
B C 8 4 6 ~B C 8 4 8 S uffi x " AW"
B C 8 4 6 ~B C 8 5 0 S uffi x " B W"
B C 8 4 7 ~B C 8 5 0 S uffi x " C W"
B C 8 4 6 ~B C 8 4 8 S uffi x " AW"
B C 8 4 6 ~B C 8 5 0 S uffi x " B W"
B C 8 4 7 ~B C 8 5 0 S uffi x " C W"
I
E B O
I
C B O
V E B =5
V C B =3 0V, IE =0
V C B =3 0V, IE =0 ,T
J
=1 5 0
O
C
IC =1 0
μA
, V C E =5 V
-
-
90
150
270
180
290
520
-
0 .7
0 .9
0 .6 6 0
-
-
100
15
5 .0
-
nA
nA
μA
-
h
FE
-
D C C urre nt Ga i n
h
FE
IC =2 .0 mA , V C E =5 V
IC =1 0 mA , IB =0 .5 mA
IC =1 0 0 mA , IB =5 .0 mA
IC =1 0 mA , IB =0 .5 mA
IC =1 0 0 mA , IB =5 .0 mA
IC =2 mA , V C E =5 .0 V
IC =1 0 mA , V C E =5 .0 V
V C B =1 0V, IE =0 , f=1 MH
11 0
200
420
-
-
0 .5 8
-
-
220
450
800
0 .2 5
0 .6
-
0 .7 0
0 .7 7
4 .5
-
C o lle c to r - E mi tte r S a tura ti o n Vo lta g e
B a se - E mi tte r S a tura ti o n Vo lta g e
B a se - E mi tte r Vo lta g e
C o lle c to r - B as e C a p a ci ta nce
V
C E (S AT)
V
C E (S AT)
V
C E (S AT)
C
CBO
V
V
V
pF
December 17,2010-REV.00
PAGE . 2
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS CURVE (BC846BW,BAC847BW,BC848BW,BC849BW,BC850BW)
100
V
CB
=30V
500
450
400
T
J
=150˚ C
V
CE
=5V
I
CB0
, Collector Current (nA)
10
hF
E
350
300
250
200
T
J
=100˚ C
T
J
=25 ˚C
1
150
100
50
0
25
50
75
100
125
150
Junction Temperature, T
J
(
O
C)
0
0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Fig. 1. Typical I
CB0
vs. Junction Temperature
1200
1000
Fig. 2. Typical h
FE
vs. Collector Current
1000
T
J
= 25 ˚C
T
J
= 100 ˚C
V
CE(sat)
(mV)
,
100
T
J
= 100 ˚C
T
J
= 150 ˚C
800
V
BE(ON)
(mV)
,
600
400
V
CE
=5V
T
J
= 25 ˚C
I
C
/I
B
=20
200
T
J
= 150 ˚C
0
0.01
0.1
1
10
100
1000
10
0.01
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
1200
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
10
1000
T
J
= 25 ˚C
800
T
J
= 100 ˚C
C
ib (EB)
T
J
= 25 ˚C
600
Capacitance, C (pF
)
V
BE(sat)
(mV)
,
C
ob (CB)
400
200
T
J
= 150 ˚C
I
C
/I
B
=20
0
0.01
1
0.1
1
10
100
0.1
1
10
100
Collector Current, I
C
(mA)
Reverse Voltage (V)
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
December 17,2010-REV.00
Fig. 6.
Typical Capacitances vs. Reverse Voltage
PAGE . 4
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS CURVE (BAC847CW,BC848CW,BC849CW,BC850CW)
100
V
CB
=30V
1200
V
CE
=5V
I
CB0
, Collector Current (nA)
1000
T
J
=150˚ C
10
hF
E
800
T
J
=100˚ C
600
T
J
=25 C
1
400
200
0
25
50
75
100
125
150
Junction Temperature, T
J
(
O
C)
0
0.01
0.1
1
10
100
1000
Collector Current, IC, (mA)
Fig. 1. Typical I
CB0
vs. Junction Temperature
1200
1000
Fig. 2. Typical h
FE
vs. Collector Current
1000
800
T
J
= 100 ˚C
T
J
= 25 ˚C
V
CE(sat)
(mV)
,
T
J
= 150 ˚C
V
BE(ON)
(mV)
,
T
J
= 100 ˚C
100
600
400
T
J
= 25 ˚C
200
T
J
= 150 ˚C
V
CE
=5V
I
C
/I
B
=20
0
0.01
0.1
1
10
100
1000
10
0.01
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
1200
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
10
1000
C
ib (EB)
800
T
J
= 25 ˚C
V
BE(sat)
(mV)
,
T
J
= 100 ˚C
600
400
I
C
/I
B
=20
T
J
= 150 ˚C
0
0.01
Capacitance, C (pF
)
T
J
= 25 ˚
C
C
ob (CB)
200
1
0.1
1
10
100
0.1
1
10
100
Collector Current, I
C
(mA)
Reverse Voltage (V)
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
December 17,2010-REV.00
Fig. 6.
Typical Capacitances vs. Reverse Voltage
PAGE . 5
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
