BC817 SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current I
C
= 500mA
• In compliance with EU RoHS 2002/95/EC directives
0.120(3.04)
0.110(2.80)
45 Volts
POWER
330 mWatts
0.006(0.15)MIN.
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounce, 0.0084 gram
• Device Marking : BC817-16 : 8A
BC817-25 : 8B
BC817-40 : 8C
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)MAX.
MECHANICAL DATA
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Junction and Storage Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
TOT
T
J
, T
STG
Value
45
50
5.0
500
330
-55 to +150
UNIT
V
V
V
mA
mW
o
C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance , Junction to Ambient
SYMBOL
R
θJA
Value
556
UNIT
o
C/W
Note 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in
January 05,2011-REV.01
PAGE . 1
BC817 SERIES
ELECTRICAL CHARACTERISTICS(T
J
=25
o
C,unless otherwise notes)
PARAMETER
Collector-Emitter Breakdown Voltage (Ic=10mA, IB=0)
Collector-Base Breakdown Voltage (V
EB
=0V, Ic=10μA
Emitter-Base Breakdown Voltage (I
E
=1μA,Ic=0)
Emitter-Base Cutoff Current (V
EB
=5V)
Collector-Base Cutoff Current (V
CB
=20V,I
E
=0)
T
J
=150
o
C
DC Current Gain
(Ic=100mA,V
CE
=1V)
(Ic=500mA,V
CE
=1V)
Collector-Emitter Saturation Voltage (Ic=500mA ,I
B
=50mA)
Base-Emitte Voltage (Ic=500mA,V
CE
=1.0V)
Collector-Base Capacitance (V
CB
=10V,I
E
=0,f=1MHz)
Current Gain-Bandwidth Product (Ic=10mA,V
CE
=5V,f=100MHz)
V
CE(SAT)
V
BE(ON)
C
CBO
f
T
BC817-16
BC817-25
BC817-40
SYMBOL
V
(BR)
CEO
V
(BR)
CBO
V
(BR)
EBO
I
EBO
I
CBO
MIN.
45
50
5.0
-
-
-
100
160
250
40
TYP.
-
-
-
-
MAX.
-
-
-
100
100
-
5.0
-
-
-
-
UNIT
V
V
V
nA
nA
μA
h
FE
250
400
600
-
-
-
-
-
100
-
-
7.0
-
0.7
1.2
-
-
V
V
pF
MHz
ELECTRICAL CHARACTERISTICS CURVES
450
400
250
200
300
350
300
hFE
150
100
50
0
0.01
0.1
1
10
100
1000
hFE
V
CE
= 1V
250
200
150
100
50
0
0.01
0.1
1
V
CE
= 1V
10
100
1000
Colle ctor Cur r e nt
,
I
C
(
m A
)
Colle ctor Cur r e nt
,
I
C
(
m A
)
Fig
. 1.
BC
817-16
Typical h
FE
vs
.
I
C
100
Fig
. 2.
BC
817-25
Typical h
FE
vs
.
I
C
700
600
500
Capacitance
,
C
J
(
p F)
C
IB
(EB)
hFE
400
300
200
100
0
0.01
V
CE
= 1V
0.1
1
10
100
1000
10
C
OB
(EB)
1
0.1
1
10
100
Reverse Voltage
,
V
(
V
)
R
Colle ctor Curre nt
,
I
C
(
m A
)
Fig
. 3
January 05,2011-REV.01
BC
817-40
Typical h
FE
vs
.
I
C
Fig
. 4
Typical Capacitances
PAGE . 2
BC817 SERIES
MOUNTING PAD LAYOUT
SOT-23
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
January 05,2011-REV.01
PAGE . 3
详细参数
全文预览
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
