BAT54TB6/ATB6/CTB6/STB6/DTB6
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
VOLTAGE
FEATURES
Isolated diode arrays for significant board space savings
Surface mount package ideally suited for automatic insertion
Extremely Fast Switching Speed
Very Low VF: 0.347V (Typ) at IF = 10mA
In compliance with EU RoHS 2002/95/EC directives
30 Volts
POWER
200mWatts
SOT-563
MECHANICAL DATA
PRELIMINARY
Case : SOT-563 plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Approx Weight : 0.003 gram
Marking :
BAT54TB6
TH
BAT54ATB6
TJ
BAT54CTB6
TY
BAT54STB6
T6
BAT54DTB6
TL
ABSOLUTE RATINGS (each diode)
Parameter
Maximum Reverse Voltage
Peak Reverse Voltage
Continuous Forward Current
Symbol
V
R
V
RRM
I
F
Value
30
30
0.2
Units
V
V
A
THERMAL CHARACTERISTICS
Parameter
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Junction Temperature
Storage Temperature
Symbol
P
TOT
Rθ
JA
T
J
T
STG
Value
200
625
-55 to 125
-55 to 150
Units
mW
O
C/W
O
C
C
O
NOTE:
1. FR-4 Board = 70 x 60 x 1mm.
BAT54TB6
BAT54ATB6
BAT54CTB6
BAT54STB6
BAT54DTB6
REV.0.3-JAN.15.2010
PAGE . 1
BAT54TB6/ATB6/CTB6/STB6/DTB6
ELECTRICAL CHARACTERISTICS (each diode) (T
A
=25
O
C, unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Reverse Current
Symbol
V
(BR)
I
R
Test Condition
I
R
=100 uA
V
R
=25 V
I
F
=0.1mA
I
F
=1.0mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=1V, f=1.0MH
Z
MIN.
30
-
-
-
-
-
-
-
TYP.
-
-
-
-
0.347
-
-
-
MAX.
-
2.0
0.24
0.32
0.40
0.50
1.00
10
Units
V
μA
Forward Voltage
V
F
V
PRELIMINARY
Total Capacitance
C
T
pF
ELECTRICAL CHARACTERISTICS CURVES
10
T
J
=75 C
O
I
R
, Reverse Current(uA)
1.0
mA
J
J
0.1
T
J
=25 C
O
J
J
0.01
T
J
=-25 C
O
J
0.001
0
5
10
15
20
25
30
V
R
, Reverse Voltage(V)
Fig. 1- Typical Reverse Leakage
Fig. 2- Forward Characteristics
14
12
CT, Total Capacitance (pF)
10
8
6
4
2
0
0
10
20
30
VR, Reverse Voltage (V)
Fig. 3- Typical Total capacitance
REV.0.3-JAN.15.2010
PAGE . 2