1SMB3EZ6.8~1SMB3EZ51
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
VOLTAGE
FEATURES
• Low profile package
• Built-in strain relief
• Glass passivated iunction
• Low inductance
• Typical I
D
less than 1.0µA above 11V
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
• In compliance with EU RoHS 2002/95/EC directives
6.8 to 51 Volts
POWER
3.0 Watts
MECHANICALDATA
• Case: JEDEC DO-214AA, Molded plastic over passivated junction
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Indicated by cathode band
• Standard packing: 12mm tape (E1A-481)
• Weight: 0.0032 ounce, 0.092 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak Pulse Power Dissipation on T
L
=50
O
C (Notes A)
Derate above 50
O
C
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating Junction and Storage Temperature Range
Symbol
Value
3.0
Units
W atts
P
D
I
FSM
T
J
,T
STG
15
-55 to + 150
Amps
O
C
NOTES:
A.Mounted on 5.0mm
2
(.013mm thick) land areas.
B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum
STAD-MAR.25.2009
1
PAGE . 1
1SMB3EZ6.8~1SMB3EZ51
Max Reverse
Leakage Current
I
ZK
mA
µA
I
R
@V
R
V
N o m i na l Ze ne r V o l t a g e
Part Number
No m. V
3.0 Watt ZENER
1SMB3EZ6.8
1SMB3EZ7.5
1SMB3EZ8.2
1SMB3EZ8.7
1SMB3EZ9.1
1SMB3EZ10
1SMB3EZ11
1SMB3EZ12
1SMB3EZ13
1SMB3EZ14
1SMB3EZ15
1SMB3EZ16
1SMB3EZ17
1SMB3EZ18
1SMB3EZ19
1SMB3EZ20
1SMB3EZ22
1SMB3EZ24
1SMB3EZ25
1SMB3EZ27
1SMB3EZ28
1SMB3EZ30
1SMB3EZ33
1SMB3EZ36
1SMB3EZ39
1SMB3EZ43
1SMB3EZ47
1SMB3EZ51
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
6.46
7.13
7.79
8.27
8.65
9.5
10.45
11.4
12.35
13.3
14.25
15.2
16.15
17.1
18.05
19
20.9
22.8
23.75
25.65
26.6
28.5
31.35
34.2
37.05
40.85
44.65
48.45
7.14
7.88
8.61
9.14
9.56
10.5
11.55
12.6
13.65
14.7
15.75
16.8
17.85
18.9
19.95
21
23.1
25.2
26.25
28.35
29.4
31.5
34.65
37.8
40.95
45.15
49.35
53.55
2
2
2
2
3
4
4
5
5
5
6
6
6
6
7
7
8
9
10
10
12
16
20
22
28
33
38
45
V
Z
@ I
ZT
M i n. V
M a x. V
M a x i m u m Z e n e r Im p e d a n c e
Z
ZT
@ I
ZT
Ω
I
ZT
mA
Z
ZK
@ I
ZK
Ω
Marking
C ode
110
100
91
85
82
75
68
63
58
53
50
47
44
42
40
37
34
31
30
28
27
25
23
21
19
17
16
15
700
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
1
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
5
5
5
4
3
3
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
4
5
6
6.6
7
7.6
8.4
9.1
9.9
10.6
11.4
12.2
13
13.7
14.4
15.2
16.7
18.2
19
20.6
21.3
22.5
25.1
27.4
29.7
32.7
35.8
38.8
6V 8B
7V 5B
8V 2B
8V 7B
9V 1B
10B
11B
12B
13B
14B
15B
16B
17B
18B
19B
20B
22B
24B
25B
27B
28B
30B
33B
36B
39B
43B
47B
51B
STAD-MAR.25.2009
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PAGE . 2
1SMB3EZ6.8~1SMB3EZ51
1
1000
500
300
200
100
50
30
20
10
2
3
APPLICATION NOTE:
Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction
temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
q
LA P
D
+ T
A
O
q
L
A
is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for
q
L
A
will vary and depends
on the device mounting method.
q
L
A
is generally 30-40
O
C/W for the various clips and tie points in common use and for printed
circuit board wiring.
The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of
TL, the junction temperature may be determined by:
T
J
= T
L
+
D
T
JL
D
T
JL
is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses
or from Figure 10 for dc power.
D
T
JL
= J
L
P
D
q
For worst-case design, using expected limits of I
Z
, limits of P
D
and the extremes of T
J
(
D
T
J
) may be estimated. Changes in voltage,
V
Z
, can then be found from:
D
V = V
Z
T
J
q D
q
V
Z
, the zener voltage temperature coefficient, is found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance.
For best regulation, keep current excursions as low as possible.
Data of Figure 2 should not be used to compute surge capa-bility. Surge limitations are given in Figure 3. They are lower than would
be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small
spots resulting in device degradation should the limits of Figure 3 be exceeded.
STAD-MAR.25.2009
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PAGE . 3
1SMB3EZ6.8~1SMB3EZ51
RANGE
4
5
6
7
8
STAD-MAR.25.2009
1
PAGE . 4
1SMB3EZ6.8~1SMB3EZ51
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 3K per 13" plastic Reel
T/R - 0.5Kper 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-MAR.25.2009
1
PAGE . 5
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