MMBT4401
NPN
Transistor
Features
■
■
■
Switching transistor
Ultra-small surface mount package
Plastic-Encapsulate transistor
3
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
1
2
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance
from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
STG
Value
60
40
6
600
300
417
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Package: SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Electrical
Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
(T
A
=25°C unless otherwise noted）
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
Test Conditions
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
= 0.4V
V
CE
=35V, V
EB
Min
60
40
6
-
-
-
20
40
80
100
40
-
-
-
-
250
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
0.1
0.1
0.1
-
-
-
300
-
0.4
0.75
0.95
1.2
-
15
20
225
60
V
V
V
V
MHz
nS
nS
nS
nS
Unit
V
V
V
μA
μA
μA
I
CBO
= 0
V
CB
=50V,I
E
I
EBO
= 0
V
EB
=5V,I
C
h
FE1
= 0.1mA
V
CE
=1V, I
C
h
FE2
= 1mA
V
CE
=1V, I
C
DC Current Gain
h
FE3
= 10mA
V
CE
=1V, I
C
h
FE4
= 150mA
V
CE
=1V, I
C
h
FE5
= 500mA
V
CE
=2V, I
C
= 15mA
I
C
=150mA,I
B
= 50mA
I
C
=500mA,I
B
= 15mA
I
C
=150mA,I
B
= 50mA
I
C
=500mA,I
B
V
CE
=10V, I
C
=20mA,f =100MHz
V
CC
=30V, V
BE(off)
=-2V
I
C
=150mA , I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
1/4
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(sat)
V
BE(sat
）
f
T
t
d
t
r
t
s
t
f
MMBT4401
NPN
Transistor
Typical
Characteristics Curve
s
250
(T
A
= 25°C unless otherwise noted)
1000
Static Characteristic
COMMON
EMITTER
T
a
=25°C
h
FE
COMMON EMITTER
V
CE
= 1V
——
I
C
(mA)
200
1mA
0.8mA
h
FE
0.9mA
T
a
=100°C
T
a
=25°C
100
I
C
COLLECTOR CURRENT
150
0.7mA
0.6mA
100
0.5mA
0.4mA
0.3mA
50
0.2mA
I
B
=0.1mA
0
DC CURRENT GAIN
0
1
3
4
10
1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
10
I
C
100
(mA)
600
1000
V
BEsat
β=10
——
I
C
1000
V
CEsat
β=10
——
I
C
800
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25°C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
600
T
a
=100
°C
100
T
a
=100
°C
400
T
a
=25°C
200
0
0.1
1
10
100
600
10
0.50.1
1
10
100
600
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
2/4
MMBT4401
NPN
Transistor
Package Outline
Dimensions
SOT-23
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
Suggested
Pad Layout
Note:
1. Controlling dimension: in millieters
2. General tolerance: 0.05mm
3. The pad layout is for reference purpose only
Ordering Information
Device
MMBT4401
Package
SOT-23
Marking
2X
Quantity
3000pcs
/ Reel
HSF Status
RoHS Compliant
www.goodarksemi.com
4/4
Doc.USMMBT4401xSC2.0
Dec. 2018
详细参数
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