IMZ2A
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSISTORS
VOLTAGE
FEATURES
• PNP/ NPN epitaxial silicon, planar design
• Collector-emitter voltage V
CE
=50V
• Collector current IC=150mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.119(3.00)
0.110(2.80)
0.075(1.90)
BSC
0.119(3.00)
0.102(2.60)
0.067(1.70)
0.059(1.50)
50 Volts
POWER
300mW
SOT23-6L
Unit
：
inch(mm)
0.009(0.22)
0.003(0.08)
MECHANICAL DATA
Case : SOT23-6L plastic
Terminals : Solderable per MIL-STD-750,Method 2026
Approx. Weight:
0.0005 ounces,
0.014 grams
Marking : Z2A
Tr2
Tr1
0.057(1.45)
MAX.
0.020(0.50)
0.012(0.30)
0.051(1.30)
0.035(0.90)
0.006(0.15)
MAX.
Fig.137
ABSOLUTE RATINGS
(T
A
=25°C)
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
Tr1
-50
-60
-6
-150
Tr2
50
60
7
150
UNITS
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max. Power Dissipation (Note1)
Thermal Resistance, Junction to Ambient (Note1)
Operating Junction and Storage Temperature Range
SYMBOL
P
TOT
R
ΘJA
T
J
,T
STG
VALUE
300
106
-55 to +150
UNITS
mW
O
C/W
O
C
NOTE:
1. Transistor mounted on FR-4 board 70 x 60 x 1 mm.
REV.0.1-MAR.10.2009
PAGE . 1
IMZ2A
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
Tr1 (PNP)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
DC Current Gain (Note1)
Collector-Emitter Saturation Voltage
Cutoff Frequency
Output Capacitance
Tr2 (NPN)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
DC Current Gain (Note1)
Collector-Emitter Saturation Voltage
Cutoff Frequency
Output Capacitance
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C ob
TEST CONDITION
I
C
=1mA
I
C
=50
µA
I
E
=50
µA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
I
E
=2mA,V
CE
=12V,
f=100MHz
I
E
=0mA,V
CE
=12V,
f=100MHz
MIN
50
60
7
-
-
120
-
-
-
TYP
-
-
-
-
-
-
-
180
2
MAX
-
-
-
0.1
0.1
560
0.4
-
3.5
UNITS
V
V
V
µA
µA
-
V
MHz
pF
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C ob
TEST CONDITION
I
C
=-1mA
I
C
=-50
µA
I
E
=-50
µA
V
CB
=-60V
V
EB
=-6V
V
CE
=-6V, I
C
=-1mA
I
C
/I
B
=-50mA/-5mA
I
E
=2mA,V
CE
=-12V,
f=100MHz
I
E
=0mA,V
CE
=-12V,
f=100MHz
MIN
-50
-60
-6
-
-
120
-
-
-
TYP
-
-
-
-
-
-
-
140
4
MAX
-
-
-
-0.1
-0.1
560
-0.5
-
5
UNITS
V
V
V
µA
µA
-
V
MHz
pF
REV.0.1-MAR.10.2009
PAGE . 2
IMZ2A
Fig. 1. Collector Saturation Region
Fig. 2. DC Current Gain
`
Fig. 3. V
CE(sat)
versus I
C
Fig. 4. V
BE(sat)
versus I
C
Fig. 5. Base-Emitter Voltage
REV.0.1-MAR.10.2009
PAGE . 3
IMZ2A
Fig. 1. Collector Saturation Region
Fig. 2. DC Current Gain
`
Fig. 3. V
CE(sat)
versus I
C
Fig. 4. V
BE(sat)
versus I
C
Fig. 5. Base-Emitter Voltage
REV.0.1-MAR.10.2009
PAGE . 4
IMZ2A
MOUNTING PAD LAYOUT
SOT-23 6L
Unit
：
inch(mm)
0.024
(0.60)
0.026
(0.67)
0.037
(0.95)
0.037
(0.95)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-MAR.10.2009
0.096
(2.43)
PAGE . 5
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