BS807
N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
POWER SEMICONDUCTOR
Features
•
•
•
•
•
High Breakdown Voltage
High Input Impedance
Fast Switching Speed
Specially Suited for Telephone Subsets
Ideal for Automated Surface Mount Assembly
SOT-23
A
D
TOP VIEW
G
E
D
G
H
K
J
L
M
S
B
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
Mechanical Data
•
•
•
•
•
Case: SOT-23, Plastic
Terminals: Solderable per
MIL-STD-202 Method 208
Pin Connection: See Diagram
Marking: S07
Weight: 0.008 grams (approx.)
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGS
V
GS
I
D
P
d
T
j
, T
STG
Value
200
200
±20
100
310
-55 to +150
Unit
V
V
V
mA
mW
°C
Characteristic
Gate-Source Voltage (pulsed) (Note 2)
Drain Current (continuous)
Power Dissipation @ T
C
= 50°C (Note 1)
Operating and Storage Temperature Range
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
I
F
V
F
Value
0.3
0.85
Unit
A
V
Max Forward Current (continuous)
Forward Voltage Drop (typ)
@ V
GS
= 0, I
F
= 0.3A, T
j
= 25°C
Notes:
1. Device mounted on ceramic substrate 0.7mm x 2.5cm
2
area.
2. Pulse test: Pulse width = 80µs, duty cycle = 1%.
DS11301 Rev. D-3
1 of 3
BS807
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage
Gate-Body Leakage Current
Drain-Source Cutoff Current
Gate-Source Threshold Voltage
Drain-Source ON Resistance
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)DSS
I
GSS
I
DSS
I
DSX
V
GS(th)
r
DS(ON)
R
θJSB
R
θJA
C
iss
C
oss
C
rss
Min
200
—
—
—
—
—
—
—
Typ
230
—
—
1.8
18
—
—
58
8.0
1.5
Max
—
10
30
1.0
3.0
28
320
400
—
Unit
V
nA
nA
µA
V
Ω
K/W
K/W
pF
Test Condition
I
D
= 100µA, V
GS
= 0
V
GS
= 15V, V
DS
= 0
V
DS
= 130V, V
GS
=0
V
DS
= 70V, V
GS
= 0.2V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 2.8V, I
D
= 20 mA
Note 1
Note 1
V
DS
= 20V,V
GS
= 0,f = 1.0 MHz
Thermal Resistance, Junction to Substrate Backside
Thermal Resistance, Junction to Ambient Air
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1. Device mounted on ceramic substrate 0.7mm x 2.5cm
2
area.
2. Pulse test: Pulse width = 80µs, duty cycle = 1%.
DS11301 Rev. D-3
2 of 3
BS807
500
See Note 1
500
See Note 2
T
A
= 25 C
I
D(ON)
, DRAIN ON-CURRENT (mA)
P
d
, POWER DISSIPATION (mW)
400
400
V
GS
= 4V
300
300
3.5
200
200
3
100
100
2.5
0
0
100
T
SB
, SUBSTRATE TEMPERATURE ( C)
Fig. 1, Power Derating Curve
500
See Note 2
T
A
= 25 C
0
200
2
0
20
40
60
80
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2, Output Characteristics
1.0
See Note 2
V
DS
= 25V
T
A
= 25 C
I
D(ON)
, DRAIN ON-CURRENT (mA)
400
V
GS
= 4V
0.8
300
3.5
I
D
, DRAIN CURRENT (A)
10
0.6
200
3
0.4
100
2.5
0.2
0
0
2
4
6
2
0
0
1
2
3
4
5
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 3, Saturation Characteristics
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 4, Drain Current vs Gate-Source Voltage
500
V
DS
= 25V
See Note 2
500
V
DS
= 25V
See Note 2
g
fs
, TRANSCONDUCTANCE (mm)
400
g
fs
, TRANSCONDUCTANCE (mm)
400
300
300
200
200
100
100
0
0
1
2
3
4
5
0
0
100
I
D
, DRAIN CURRENT (mA)
Fig. 6, Transconductance vs Drain Current
200
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 5, Transconductance vs Gate-Source Voltage
DS11301 Rev. D-3
3 of 3
BS807
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