RoHS
BSS123W
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
● I
D
● R
DS(ON)
( at V
GS
=10V)
● R
DS(ON)
( at V
GS
=4.5V)
100V
200mA
＜5.0ohm
＜5.5ohm
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● High density cell design for low R
DS(ON)
● Fast Switching Speed
Applications
● Small servo motor control
● Power MOSFET gate drivers
● Switching application
■
Absolute Maximum Ratings
(T
A
=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
V
DS
100
V
Gate-source Voltage
T
A
=25℃ @ Steady State
T
A
=70℃ @ Steady State
V
GS
±20
200
160
800
V
Drain Current
I
D
mA
Pulsed Drain Current
A
I
DM
mA
Total Power Dissipation @ T
A
=25℃
P
D
350
mW
Thermal Resistance Junction-to-Ambient @ Steady State
B
R
θJA
357
℃/
W
Junction and Storage Temperature Range
T
J
,T
STG
-55½+150
℃
■
Ordering Information
(Example)
PREFERED P/N
PACKING
CODE
Marking
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
BSS123
F2
B123.
3000
30000
120000
7“ reel
1/6
S-S1965
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
BSS123W
■
Electrical Characteristics
(T
J
=25℃ unless otherwise noted)
Parameter
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
GSS1
Gate-Body Leakage Current
I
GSS2
Gate Threshold Voltage
V
GS(th)
V
GS
=
±10V,
V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
= 10V, I
D
=200mA
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
= 4.5V, I
D
=200mA
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Dynamic Parameters
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Total Gate Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off fall Time
Q
g
t
D(on)
t
r
V
GS
=10V,V
DD
=50V, I
D
=0.2A,
R
GEN
=6Ω
t
D(off)
t
f
17
7
V
GS
=10V,V
DS
=50V,I
D
=0.2A
1.8
1.7
9
ns
2.5
nC
C
iss
C
oss
C
rss
V
DS
=50V,V
GS
=0V,f=1MHZ
14
10
5
pF
V
SD
I
S
I
S
=200mA,V
GS
=0V
3.5
5.5
1.2
200
V
mA
1.0
1.8
3.0
±50
2.5
5.0
Ω
nA
V
V
GS
= 0V, I
D
=250μA
V
DS
=100V,V
GS
=0V
V
GS
=
±20V,
V
DS
=0V
100
1
±100
V
μA
nA
Symbol
Conditions
Min
Typ
Max
Units
A. Pulse Test: Pulse Width≤300us,Duty cycle
≤2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2/6
S-S1965
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
BSS123W
■ Typical Performance Characteristics
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
3/6
S-S1965
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
BSS123W
Figure7. Safe Operation Area
Figure8. Switching wave
4/6
S-S1965
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
BSS123W
■
SOT-323 Package information
■SOT-323 Suggested Pad Layout
5/6
S-S1965
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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