LITE-ON
SEMICONDUCTOR
B370 thru B3100
REVERSE VOLTAGE -
70
to
100
Volts
FORWARD CURRENT -
3.0
Amperes
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
For surface mounted applications
Metal-Semiconductor junction with guardring
Epitaxial construction
Very Low forward voltage drop
High current capability
Plastic material has UL flammability classification
94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
SMC
SMC
A
DIM.
A
B
C
B
C
D
E
F
G
H
F
E
D
G
H
MIN.
6.60
5.59
2.92
0.15
7.75
0.05
2.01
0.76
MAX.
7.11
6.22
3.18
0.31
8.13
0.20
2.62
1.52
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.007 ounces, 0.21 grams
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
B370
70
49
70
B380
80
56
80
3.0
B390
90
63
90
B3100
100
70
100
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
@T
L
=90 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Forward Voltage at
3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
I
FSM
100
0.79
0.69
A
@T
J
=25 C
@T
J
=100 C
@T
J
=25 C
@T
J
=100 C
V
F
V
I
R
0.5
20
100
10
-55 to +125
-55 to +150
mA
C
J
R
0JL
pF
C/W
T
J
T
STG
C
C
REV. 2, 01-Dec-2000, KSHC02
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
RATING AND CHARACTERISTIC CURVES
B370 thru B3100
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
3.0
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
120
100
80
60
40
20
0
1
2
5
10
20
50
100
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
2.0
1.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0
20
40
60
80
100
120
140
LEAD TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT,(A)
1000
FIG.4 - TYPICAL JUNCTION CAPACITANCE
1.0
CAPACITANCE, (pF)
T
J
= 25 C
PULSEWIDTH:300us
100
0.1
T
J
= 25 C F= 1MHz
.01
0.2
0.4
0.6
0.8
1.0
1.2
INSTANTANEOUS FORWARD VOLTAGE, (VOLTS)
10
0.1
1.0
4.0
10.0
100
REVERSE VOLTAGE, (VOLTS)
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS
REVERSE CURRENT, (mA)
10
T
J
= 125 C
T
J
= 100 C
1.0
0.1
T
J
= 25 C
0.01
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
REV. 2, 01-Dec-2000, KSHC02
DSP 与 ARM 处理器
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