EN29SL160
EN29SL160
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 1.8 Volt-only
FEATURES
•
Single power supply operation
- Full voltage range:1.65-2.2 volt for read and
write operations.
- Regulated voltage range: 1.8-2.2 volt read
and write operations
•
High performance
- Access times as fast as 90 ns
•
Low power consumption (typical values
at 5 MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 0.2
μA
typical standby current
•
Flexible Sector Architecture:
- Eight 8-Kbyte and thirty-one 64-Kbyte sectors
(byte mode)
- Eight 4-Kword and thirty-one 32-Kword
sectors (word mode)
•
WP#/ACC Input pin:
- Write protect (WP#) function allows protection
of two outermost boot sectors, regardless of
sector protect status
- Acceleration (ACC) function acceleration
program timing.
•
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
•
High performance program/erase speed
- Byte/Word program time: 5µs/7µs typical
- Sector erase time: 500ms typical
•
JEDEC Standard Embedded Erase and
Program Algorithms
•
JEDEC standard DATA# polling and toggle
bits feature
•
Unlock Bypass Program command supported
•
Single Sector and Chip Erase
•
Sector Unprotect Mode
•
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
•
Low Vcc write inhibit < 1.2V
•
Minimum 100K endurance cycle
•
-
-
-
-
Package Options
48-pin TSOP (Type 1)
48-ball 6mm x 8mm TFBGA
48-ball 5mm x 6mm WFBGA
48-ball 5mm x 6mm WLGA
•
Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN29SL160 is an 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 5µs.
The EN29SL160 features 1.8V voltage read and write operation, with access time as fast as 90ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29SL160 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
WFBGA and WLGA
Top View, Balls Facing Down
A6
A2
A5
A1
A4
A0
A3
CE#
A2
V
SS
B6
A4
B5
A3
B4
A5
B3
DQ8
B2
OE#
B1
DQ0
C6
A6
C5
A7
C4
A18
C3
DQ10
C2
DQ9
C1
DQ1
D2
A19
D1
DQ2
E1
DQ3
F1
V
DD
G1
DQ12
H2
NC
H1
DQ13
D6
A17
D5
WP
WP#/ACC
#/A
E6
NC
F6
NC
G6
WE#
H6
Reset#
H5
NC
I6
A9
I5
A10
I4
A8
I3
DQ4
I2
DQ5
I1
DQ14
J6
A11
J5
A13
J4
A12
J3
DQ11
J2
DQ6
J1
DQ15
K5
A14
K4
A15
K3
A16
K2
DQ7
K1
V
SS
Notes:
1.
2.
RY/BY#, Byte# are not available for WFBGA package.
It is organized as 1M x 16 (16Mbit)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
TABLE 1. PIN DESCRIPTION
Pin Name
A0-A19
DQ0-DQ14
DQ15 / A-1
CE#
OE#
RESET#
RY/BY#
WE#
WP#/ACC
Vcc
Vss
NC
BYTE#
20 Addresses
15 Data Inputs/Outputs
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
Chip Enable
Output Enable
Hardware Reset Pin
Ready/Busy Output
Write Enable
Hardware write protect/acceleration pin
Supply Voltage
(1.65-2.2V)
Ground
Not Connected to anything
Byte/Word Mode
Function
FIGURE 1. LOGIC DIAGRAM
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
