LITE-ON
SEMICONDUCTOR
MBRB20H100CT
REVERSE VOLTAGE
- 100
Volts
FORWARD CURRENT
- 20
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
Low leakage current
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
1
D
2
PAK
K
A
K
I
D
B
F
C
DIM.
A
B
C
D
E
F
G
H
I
D
2
PAK
MIN.
9.65
14.60
8.25
-----
0.51
2.29
2.29
2.03
1.14
MAX.
10.69
15.88
9.25
1.40
1.14
2.79
2.79
2.92
1.40
0.64
4.83
K
2
MECHANICAL DATA
Case : D
2
PAK molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
PIN 1
PIN 2
G
E
J
H
K
HEATSINK
J
0.30
4.37
K
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
SYMBOL
MBRB20H100CT
100
70
100
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
T
C
=125 C
20
250
10000
0.77
0.64
0.88
0.73
5
5
1.4
300
-65 to +175
-65 to +175
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
I
FSM
dv/dt
A
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage (Note 1)
V/us
I
F
=10A @
I
F
=10A @
I
F
=20A @
I
F
=20A @
T
J
=25 C
T
J
=125 C
T
J
=25 C
T
J
=125 C
@T
J
=25 C
@T
J
=125 C
V
F
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
R
R
0JC
uA
mA
C/W
pF
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance
per element (Note 3)
Operating Temperature Range
Storage Temperature Range
C
J
T
J
T
STG
C
C
REV. 1, Feb-2009, KTHB12
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
RATING AND CHARACTERISTIC CURVES
MBRB20H100CT
FIG.1 - FORWARD CURRENT DERATING CURVE
25.0
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT ,
AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
250
200
150
100
50
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
8.3ms Single
Half-Sine-Wave
(JEDEC METHOD)
20.0
15.0
10.0
5.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0
25
50
75
100
125
150
175
TEMPERATURE ,
℃
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT , (mA)
1.0
INSTANTANEOUS FORWARD CURRENT , (A)
100
T
J
=125
℃
0.1
10
0.01
1.0
0.001
T
J
=25
℃
0.0001
0
10
20
30
40
50
60
70
80
90
100 110 120 130
T
J
=25℃
PULSE WIDTH 300us
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
CAPACITANCE , (pF)
100
T
J
=25
℃
, f=1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
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