TQP7M4002
(Advance Datasheet)
3V Quad-Band E-GSM/GSM850/DCS/PCS Power Amplifier MMIC
Description:
Package Outline :
The TQP7M4002 is a quad-band capable 3V power amplifier
MMIC for GSM applications. Fabricated with a high-reliability
InGaP GaAs HBT technology, the MMIC supports GPRS Class-
12 operation. By virtue of advanced design techniques,
exceptional performance is achieved with only two stages in
Dimensions in mm
each amplifier. On-die in put and interstage matching is
employed using a high-Q passives technology. Together these
technologies allow an extremely compact size to be achieved
with excellent electrical performance with minimal external
components. The small 4mm square surface mount, leadless
package is ideal for new generation small and light phones.
Features:
•
Very compact size – 4×4×0.9 mm
3
.
•
High efficiency – typicals:
o
E-GSM- 58%
o
GSM 850- 56%
o
DCS- 53%
RFout/Vcc2 HB
20
RFout/Vcc2 HB
19
18
RFout/Vcc2 HB
17
Gnd.
16
Gnd.
15
Gnd.
14
Gnd.
13
RFout/Vcc2 LB
7
Vbyp LB
8
Gnd.
9
Vcc1 LB
10
Gnd.
11
RFout/Vcc2 LB
12
RFout/Vcc2 LB
o
PCS- 50%.
•
Positive supply voltage – 3.2 to 4.2 V.
•
50
Ω
input impedance.
•
GPRS class 12 compatible.
•
High-reliability InGaP technology.
•
Ruggedness 10:1.
Atten.
RFin HB
Vapc HB
Gnd.
Vapc LB
RFin LB
1
2
3
4
5
6
Vcc1 HB
22
Vbyp HB
Gnd.
Gnd.
21
24
23
Dimensions in mm
TQP7M4002 Advance Datasheet
Absolute Maximum Ratings:
Parameter
Supply voltage
DC supply current
Power control voltage
Duty cycle at max. power
Operating case temperature
Storage temperature
Symbol
V
cc
I
cc
V
apc
δ
T
a
T
s
Min.
-0.5
-0.5
-20
-55
Max.
6.0
2.0/3.0*
2.6
50
85
150
Units
V
dc
A
V
%
ºC
ºC
*(for High Bands/Low Bands)
Note: The amplifier will survive over the full range specified for any individual input, while
other parameters are nominal.
Operating Parameters:
Parameter
Supply voltage
DC supply current
Leakage current
Load impedances
Symbol
V
cc
I
cc
I
l
Z
0
Min.
3.2
Typ.
3.5
1.0/1.6*
1
TBD
Max.
4.2
20
Units
V
dc
A
µ
A
Ω
*(for High Bands/Low Bands)
Typical Performance:
E-GSM Electrical Characteristics:
E-GSM Characteristics as a function of Vapc
40
30
20
10
0
-10
-20
-30
-40
-50
0.5
1
90
80
70
60
50
40
30
20
10
0
2.5
3
Pout (dBm) & Gain (dB)
Pout
Gain
PAE
Power Added
Efficiency (%)
1.5
Vapc (V)
2
TQP7M4002 Advance Datasheet
E-GSM Electrical Characteristics (continued):
Test conditions (unless noted): V
cc
= +3.5 V, V
apc
= 2.6 V, P
in
= 6 dBm, Duty Cycle =25%, Ta = 25ºC
Parameter
Frequency Range
Input Power for P
out
max.
Symbol
f
P
in
Min.
880
3
34.5
Typ.
6
35.5
34.5
58
Max.
915
8
Units
MHz
dBm
dBm
dBm
%
V
cc
= 3.5 V
V
cc
= 3.2 V
Conditions
Output Power
P
out
η
V
apc
I
apc
P
out
/V
apc
33.5
53
0.2
Temp:
-20ºC to
+85ºC
Power Added Efficiency
Power Control Voltage
Power Control Current
Power Control Slope
Power Control Dynamic
Range
Input VSWR
Forward Leakage
Cross-band Leakage
Harmonics
Rx noise power:
925 - 935 MHz
Rx noise power:
935 - 960 MHz
2.6
6
250
70
V
mA
dB/V
dB
0
≤
P
out
≤
34.5 dBm
Iso
Iso
2f
0
3f
0
> 3f
0
-7
-21
-21
-85
-86
2.5:1
-30.0
-18.0
-7
-7
-7
dBm
dBm
dBm
dBm
dBm
0
≤
P
out
≤
34.5 dBm
V
apc
≤
0.2 V
P
out
≤
34.5 dBm
P
out
≤
34.5 dBm
Temp:
-20ºC to
+85ºC
-76
-83
P
out
≤
34.5 dBm, RBW = 100 kHz
P
out
≤
34.5 dBm, RBW = 100 kHz
All phase angles,
3.2
≤
V
CC
≤
4.2 V,
V
apc
≤
2.6 V
P
out
≤
35 dBm
All phase angles,
3.2
≤
V
CC
≤
4.2 V,
V
apc
≤
2.6 V
P
out
≤
35 dBm
Stability
8:1
Ruggedness
10:1
TQP7M4002 Advance Datasheet
DCS Electrical Characteristics:
DCS Characteristics as a function of Vapc
40
30
20
10
0
-10
-20
-30
-40
-50
0.5
1
90
80
70
60
50
40
30
20
10
0
3
Pout (dBm) & Gain (dB)
Pout
Gain
PAE
Power Added
Efficiency (%)
1.5
Vapc (V)
2
2.5
Test conditions (unless noted): V
cc
= +3.5 V, V
apc
= 2.6 V, P
in
= 6 dBm, Duty Cycle = 25%, T
a
= 25ºC
Parameter
Frequency Range
Input Power for P
out
max.
Output Power
Symbol
f
P
in
P
out
η
V
apc
I
apc
P
out
/V
apc
Min.
1710
3
32
30.5
45
0.2
Typ.
6
33
32
53
Max.
1785
8
Units
MHz
dBm
dBm
dBm
%
V
mA
dB/V
dB
V
cc
= 3.5 V
V
cc
= 3.2 V
Conditions
Temp:
-20ºC to
+85ºC
Power Added Efficiency
Power Control Voltage
Power Control Current
Power Control Slope
Power Control Dynamic
Range
Input VSWR
Forward Leakage
Harmonics
Rx noise power:
1805 - 1880 MHz
2.6
5
200
70
3:1
0
≤
P
out
≤
32.5 dBm
Iso
2f
0
3f
0
> 3f
0
-24
-24
-30
-7
-7
-7
-78
dBm
dBm
0
≤
P
out
≤
32.5 dBm
V
apc
≤
0.2 V, V
atten
> 2.0V
P
out
≤
32.5 dBm
Temp:
-20ºC to
+85ºC
-82
dBm
P
out
≤
32.5 dBm, RBW = 100 kHz
All phase angles,
3.2
≤
V
CC
≤
4.2 V,
V
apc
≤
2.6 V
P
out
≤
32.5 dBm
All phase angles,
3.2
≤
V
CC
≤
4.2 V,
V
apc
≤
2.6 V
P
out
≤
32.5 dBm
Stability
8:1
Ruggedness
10:1
TQP7M4002 Advance Datasheet
GSM 850 Electrical Characteristics:
GSM 850 Characteristics as a function of Vapc
40
30
20
10
0
-10
-20
-30
-40
-50
0.5
1
90
80
70
60
50
40
30
20
10
0
2.5
3
Pout (dBm) & Gain (dB)
Pout
Gain
PAE
Power Added
Efficiency (%)
1.5
Vapc (V)
2
Test conditions (unless noted):
V
cc
= +3.5 V, V
apc
= 2.6 V, P = 6 dBm, Duty Cycle = 25%, T
a
= 25º C
in
Parameter
Frequency Range
Input Power for P
out
max.
Output Power
Symbol
f
P
in
P
out
η
V
apc
I
apc
P
out
/V
apc
Min.
824
3
34.5
33.5
51
0.2
Typ.
6
35.5
34.5
56
Max.
849
8
Units
MHz
dBm
dBm
dBm
%
V
cc
= 3.5 V
V
cc
= 3.2 V
Conditions
Temp:
-20ºC to
+85ºC
Power Added Efficiency
Power Control Voltage
Power Control Current
Power Control Slope
Power Control Dynamic
Range
Input VSWR
Forward Leakage
Harmonics
Rx noise power:
869 - 894 MHz
2.6
6
300
70
2.5:1
-30
V
mA
dB/V
dB
0
≤
P
out
≤
34.5 dBm
V
apc
≤
0.2 V
P
out
≤
34.5 dBm
Temp:
-20ºC to
+85ºC
0
≤
P
out
≤
34.5 dBm
Iso
2f
0
3f
0
> 3f
0
dBm
dBm
-13
-13
-85
-7
-7
-7
-82.5
dBm
P
out
≤
34.5 dBm, RBW = 100 kHz
All phase angles,
3.2
≤
V
CC
≤
4.2 V,
V
apc
≤
2.6 V
P
out
≤
35 dBm
All phase angles,
3.2
≤
V
CC
≤
4.2 V,
V
apc
≤
2.6 V
P
out
≤
35 dBm
Stability
8:1
Ruggedness
10:1
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