JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJ2305K
P-Channel 12-V(D-S) MOSFET
SOT-23-3L
FEATURE
TrenchFET Power MOSFET
1. GATE
2. SOURCE
APPLICATIONS
Load Switch for Portable Devices
DC/DC Converter
3. DRAIN
MARKING: S5
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(10μs pulse width )
Power Dissipation
Thermal Resistance from Junction to Ambient
(t≤10s)
Junction Temperature
Storage Temperature
Notes :
a. t=10s.
b. Maximum under Steady State conditions is 175℃/W.
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
T
stg
Value
-20
±12
-3.5
a
-10
0.3
a
417
b
150
-50 ~+150
Units
V
A
W
℃/W
℃
A,Dec,2010
Electrical characteristics (T
a
=25℃ unless otherwise noted)
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
=-250µA
V
DS
=V
GS
, I
D
=-250µA
V
DS
=0V, V
GS
=±12V
V
DS
=-20V, V
GS
=0V
V
GS
=-4.5V, I
D
=-3.5A
Drain-source on-state resistance(note 1)
R
DS(on)
V
GS
=-2.5V, I
D
=-3A
V
GS
=-1.8V,I
D
=-2.0A
Forward transconductance(note 1)
Dynamic(note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay Time
Rise time
Turn-off delay time
Fall time
Drain-source body diode characteristics
Body diode forward voltage(note 1)
Notes:
1.
2.
Pulse Test ; Pulse Width
≤300µs,
Duty Cycle
≤2%.
These parameters have no way to verify.
V
SD
I
S
=-1.25A, V
GS
= 0V
-1.3
V
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-10V,
R
L
=10Ω,
I
D
=-1A,
V
GEN
=-4.5V,R
G
=6Ω
V
DS
=-8V,V
GS
=0V,f =1MHz
1050
190
150
10
23
120
71
ns
pF
g
fs
V
DS
=-5V, I
D
=-2.8A
8
-20
-0.42
-1.0
±100
-1
0.052
0.070
0.095
S
Ω
V
nA
µA
Symbol
Test Condition
Min
Typ
Max
Unit
A,Dec,2010
Typical Characteristics
Output Characteristics
-16
-10
CJK2305
Transfer Characteristics
T
a
=25
℃
Pulsed
-8
V
GS
=-4.5V,-4.0V,-3.5V,-3.0V,-2.5v,-2.0v
T
a
=25
℃
Pulsed
(A)
-12
V
GS
=-1.8V
(A)
I
D
-6
DRAIN CURRENT
I
D
-8
DRAIN CURRENT
-10
-4
V
GS
=-1.5V
-4
-2
-0
-0
-2
-4
-6
-8
-0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
125
——
I
D
110
R
DS(ON)
——
V
GS
T
a
=25
℃
Pulsed
T
a
=25
℃
Pulsed
100
(m
)
100
(m
)
ON-RESISTANCE
V
GS
=-1.8V
R
DS(ON)
90
80
R
DS(ON)
ON-RESISTANCE
75
V
GS
=-2.5V
70
I
D
=-3A
60
50
V
GS
=-4.5V
50
25
-0
-2
-4
-6
-8
-10
40
-0
-2
-4
-6
-8
-10
-12
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
-10
——
V
SD
T
a
=25
℃
Pulsed
(A)
SOURCE CURRENT
I
S
-1
-0.1
-0.01
-0.0
-0.3
-0.6
-0.9
-1.2
-1.5
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
A,Dec,2010
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