2N5088/89 / MMBT5088/89
NPN SMALL SIGNAL TRANSISTOR
POWER SEMICONDUCTOR
Features
•
•
•
•
Low Noise High Gain
Epitaxial Planar Die Construction
Available in both Through-Hole and Surface
Mount Packages
General Purpose, Low Noise Amplifier
B
E
D
G
H
K
M
L
MMBT5088 / MMBT5089
A
SOT-23
Dim
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
A
B
E
C
C
TOP VIEW
B
C
D
E
G
H
J
K
L
M
Mechanical Data
•
•
•
•
•
Case: TO-92/SOT-23, Plastic
Leads/Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking:
TO-92 Type Number
SOT-23 MMBT5088 1Q
MMBT5089 1R
Approx Weight: TO-92 0.18 grams
SOT-23 0.008 grams
J
2N5088 / 2N5089
E
A
B
All Dimensions in mm
TO-92
Dim
A
C
Min
4.32
4.32
12.50
0.36
3.15
2.29
1.14
Max
4.83
4.78
15.62
0.56
3.94
2.79
1.40
B
C
D
E
G
H
D
BOTTOM
VIEW
C B E
H
G
H
All Dimensions in mm
Maximum Ratings
Collector-Emitter Voltage
Collector- Base Voltage
Emitter- Base Voltage
Collector Current
Total Device Dissipation
TO-92 (Note 1)
SOT-23 (Note 2)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
d
2N/MMBT5088
30
35
4.5
100
625
350
200
357
83.3
-55 to +150
2N/MMBT5089
25
30
Unit
V
V
V
mA
mW
Characteristic
Thermal Resistance, Junction to Ambient
TO-92 (Note 1)
SOT-23 (Note 2)
Thermal Resistance, Junction to Collector
Operating and Storage Temperature
R
θJA
R
θJC
T
j
, T
STG
K/W
K/W
°C
Notes:
1. Valid provided that leads at a distance of 2.0mm from body are kept at specified ambient (TO-92).
2. Device mounted on FR-4 PCB 40 x 40 x 1.5mm..
3. Pulse test: Pulse width
l
300µs, duty cycle
l
2%.
DS21603 Rev. E-3
1 of 2
2N5088/89/MMBT5088/89
Electrical Characteristics
Characteristic
@ T
A
= 25°C unless otherwise specified
Symbol
Min
5088
30
35
—
—
300
350
300
—
—
—
—
350
50
Max
5088
—
—
50
100
50
—
900
—
—
0.5
0.8
4.0
10
1400
—
Min
5089
25
30
—
—
400
450
400
—
—
—
—
450
50
Max
5089
—
—
50
100
—
50
1200
—
—
0.5
0.8
4.0
10
1800
—
Unit
V
V
nA
nA
—
V
V
pF
pF
—
MHz
Test Condition
I
C
= 1.0mA, I
B
= 0
I
C
= 100µA, I
E
= 0
V
EB(OFF)
= 3.0V, I
C
= 0
V
EB(OFF)
= 4.5V, I
C
= 0
V
CB
= 20V, I
E
= 0
V
CB
= 15V, I
E
= 0
IC = 100µA, V
CE
= 5.0V
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 10mA, V
CE
= 5.0V
V
CB
= 5.0V, I
E
= 0
f = 100kHz
V
BE
= 0.5V, I
C
= 0
f = 100kHz
I
C
= 1.0mA, V
CE
= 5.0V,
f = 1.0kHz
I
C
= 500µA, V
CE
= 5.0V,
R
S
= 10kΩ
f = 20MHz
I
C
= 100µA, V
CE
= 5.0V,
R
S
= 10kΩ,
f = 10Hz - 15.7kHz
Collector to Emitter Breakdown Voltage (Note 3) V
(BR)CEO
Collector to Base Breakdown Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
(Note 3)
Collector-Emitter Saturation Voltage
Base-Emitter “ON” Voltage (Note 3)
Collector to Base Capacitance
Emitter to Base Capacitance
Small Signal Current Gain
Current Gain Bandwidth Product
V
(BR)CBO
I
EBO
I
CEX
h
FE
(Note 3) V
CE(SAT)
V
BE(ON)
C
cb
C
eb
h
fe
f
T
Noise Figure
NF
—
3.0
—
2.0
dB
Notes:
1. Valid provided that leads at a distance of 2.0mm from body are kept at specified ambient (TO-92).
2. Device mounted on FR-4 PCB 40 x 40 x 1.5mm..
3. Pulse test: Pulse width
l
300µs, duty cycle
l
2%.
DS21603 Rev. E-3
2 of 2
2N5088/89/MMBT5088/89
详细参数
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