LITE-ON
SEMICONDUCTOR
STPR810D thru STPR860D
REVERSE VOLTAGE -
100 to 600 Volts
FORWARD CURRENT-
8.0
Amperes
POWER FACTOR CORRECTION
RECTIFIERS (PFC DIODE)
FEATURES
Power Factor Correction function.
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification 94V-0
B
C
K
PIN
1
2
TO-220AC
L
M
D
A
E
TO-220AC
MAX.
MIN.
DIM.
14.22
15.88
A
9.65
10.67
B
C
2.54
3.43
D
5.84
6.86
10.67
9.65
E
F
G
H
-
12.70
6.35
14.73
F
G
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
I
H
J
N
PIN 1
PIN 2
CASE
4.83
5.33
1.14
0.51
I
J
0.30
0.64
K
3.53
4.09
3.56
4.83
L
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
STPR
810D
100
70
100
STPR
820D
200
140
200
STPR
830D
300
210
300
8
STPR
840D
400
280
400
STPR
850D
500
350
500
STPR
860D
600
420
600
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
@T
C
=
100 C
Peak Forward Surge Current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 8.0A
@T
J
=25 C
@T
J
=125 C
DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
FSM
90
1.1
1.0
1.3
1.2
10
1000
1.5
1.4
A
V
F
V
@T
J
=25 C
@T
J
=125 C
I
R
uA
Typical Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
C
J
T
RR
R
0JC
60
30
35
3.0
-55 to +150
50
pF
ns
C/W
T
J
,T
STG
C
REV. 0, Dec-2003, KTGA14
NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
3. Thermal Resistance Junction to case.
RATING AND CHARACTERISTIC CURVES
STPR810D thru STPR860D
AVERAGE FORWARD CURRENT
AMPERES
10
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
2
5
10
20
50
100
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
8
6
4
2
RESISTIVE OR INDUCTIVE LOAD
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
200
180
PERCENT OF FORWARD CURRE
(%)
VB@
300~400V
INSTANTANEOUS
REVERSE CURRENT ,(uA)
100
T
J
= 125 C
160
140
120
100
80
60
40
20
0
VB@
100~200V
VB@
500~600V
10
T
J
= 75 C
1.0
0.1
T
J
= 25 C
0.01
0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
CAPACITANCE , (pF)
100
T
J
= 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
REV. 0, Dec-2003, KTGA14
详细参数
全文预览
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
