BLS6G3135-120;
BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
f
(GHz)
3.1 to 3.5
V
DS
(V)
32
P
L
(W)
120
G
p
(dB)
11
D
(%)
43
t
r
(ns)
20
t
f
(ns)
6
1.2 Features
Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an I
Dq
of 100 mA, a t
p
of up to 300
s
with
of 10 %:
Output power = 120 W
Gain = 11 dB
Efficiency = 43 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
1.3 Applications
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Symbol
BLS6G3135-120 (SOT502A)
1
3
2
2
3
sym112
1
BLS6G3135S-120 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3.
Ordering information
Package
Name
BLS6G3135-120
-
Description
Version
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
earless flanged LDMOST ceramic package; 2 leads
SOT502B
Type number
BLS6G3135S-120 -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Min
-
0.5
-
65
-
Max
60
+13
7.2
+150
225
Unit
V
V
A
C
C
BLS6G3135-120_6G3135S-120#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 13
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
5. Thermal characteristics
Table 5.
Z
th(j-mb)
Thermal characteristics
Conditions
T
case
= 85
C;
P
L
= 120 W
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
0.29 0.40 K/W
0.30 0.41 K/W
Typ
Max Unit
transient thermal impedance from
junction to mounting base
Symbol Parameter
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 180 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 8.3 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
Min
60
1.4
-
27
-
-
-
Typ
-
1.8
-
33
-
13
0.085
Max
-
2.3
5
-
450
-
Unit
V
V
A
A
nA
S
0.160
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 100 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production circuit.
Symbol
P
L
V
CC
G
p
IRL
P
L(1dB)
D
t
r
t
f
Parameter
output power
supply voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
rise time
fall time
P
L
= 120 W
P
L
= 120 W
P
L
= 120 W
P
L
= 120 W
P
L
= 120 W
P
L
= 120 W
P
L
= 120 W
Conditions
Min
-
-
9.5
6
-
39
-
-
Typ
120
-
11
10
130
43
20
6
Max
-
32
-
-
-
-
50
50
Unit
W
V
dB
dB
W
%
ns
ns
BLS6G3135-120_6G3135S-120#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 13
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
Table 8.
f
GHz
3.1
3.2
3.3
3.4
3.5
Typical impedance
Z
S
2.7
j5.4
3.3
j4.7
4.2
j4.4
5.2
j4.8
5.7
j6.2
Z
L
5.9
j5.9
4.5
j6.2
3.5
j6.0
2.7
j5.6
2.0
j5.2
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
V
DS
= 32 V; I
Dq
= 100 mA; P
L
= 120 W; t
p
= 300
s;
= 10 %.
001aag823
001aag824
13
G
p
(dB)
11
η
D
G
p
50
η
D
(%)
40
14
G
p
(dB)
(1)
(2)
(3)
10
9
30
7
20
6
5
10
3
3
3.2
3.4
f (GHz)
0
3.6
2
0
40
80
120
P
L
(W)
160
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
s;
= 10 %;
P
L
= 120 W.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
s;
= 10 %.
Fig 2. Power gain and drain efficiency as functions of
frequency; typical values
Fig 3. Power gain as a function of load power; typical
values
BLS6G3135-120_6G3135S-120#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 13
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
50
η
D
(%)
40
001aag825
(1)
(2)
(3)
160
(2)
001aag826
P
L
(W)
120
(1)
(3)
30
80
20
40
10
0
0
40
80
120
P
L
(W)
160
0
0
5
10
15
P
i
(W)
20
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
s;
= 10 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
s;
= 10 %.
Fig 4. Drain efficiency as a function of load power;
typical values
13
G
p
(dB)
11
η
D
G
p
001aag827
Fig 5. Load power as a function of input power;
typical values
14
G
p
(dB)
(1)
001aag828
50
η
D
(%)
40
(2)
(3)
10
9
30
7
20
6
5
10
3
3
3.2
3.4
f (GHz)
0
3.6
2
0
40
80
120
P
L
(W)
160
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 100
s;
= 20 %;
P
L
= 120 W.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 100
s;
= 20 %.
Fig 6. Power gain and drain efficiency as functions of
frequency; typical values
Fig 7. Power gain as a function of load power; typical
values
BLS6G3135-120_6G3135S-120#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 13
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