BLS6G3135-20;
BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 50 mA; in a class-AB
production test circuit.
Mode of operation f
(GHz)
Pulsed RF
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
V
DS
(V)
P
L
(W)
20
G
p
(dB)
15.5
D
(%)
45
t
r
(ns)
20
t
f
(ns)
10
3.1 to 3.5 32
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an I
Dq
of 50 mA, a t
p
of 300
s
and a
of 10 %:
Output power = 20 W
Power gain = 15.5 dB
Efficiency = 45 %
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
1.3 Applications
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLS6G3135-20 (SOT608A)
1
1
3
2
2
3
sym112
BLS6G3135S-20 (SOT608B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLS6G3135-20
-
BLS6G3135S-20 -
Description
flanged ceramic package; 2 mounting holes; 2 leads
ceramic earless flanged package; 2 leads
Version
SOT608A
SOT608B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
60
+13
2.1
+150
225
Unit
V
V
A
C
C
BLS6G3135-20_6G3135S-20#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
2 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction
to case
Conditions
T
case
= 80
C;
P
L
= 20 W
t
p
= 100
s;
= 20 %
t
p
= 300
s;
= 10 %
0.76
0.79
0.92
0.95
K/W
K/W
Typ
Max
Unit
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 40 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 8.3 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 1.4 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1.4 A
Min
60
1.4
-
6
-
-
-
Typ
-
2
-
8.2
-
2.8
0.37
Max
-
2.4
1.5
-
150
-
0.58
Unit
V
V
A
A
nA
S
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 50 mA;
T
case
= 25
C; unless otherwise specified; in a class-AB production circuit.
Symbol
P
L
V
CC
G
p
D
t
r
t
f
Parameter
output power
supply voltage
power gain
drain efficiency
rise time
fall time
P
L
= 20 W
P
L
= 20 W
P
L
= 20 W
P
L
= 20 W
P
L
= 20 W
Conditions
Min
-
-
12
40
-
-
Typ
20
-
15.5
45
20
10
Max
-
32
-
-
50
50
Unit
W
V
dB
%
ns
ns
BLS6G3135-20_6G3135S-20#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
3 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
7.1 Impedance information
Table 8.
f
GHz
3.1
3.2
3.3
3.4
3.5
[1]
Typical impedance
Z
L
(optimized for
D
)
6.99 + j12.9
5.82 + j8.77
2.32 + j6.17
5.52 + j6.10
5.79 + j3.19
Z
L
(optimized for G
p
)
13.01 + j14.75
11.47 + j11.17
10.05 + j10.55
9.93 + j8.48
9.37 + j5.73
G
p(opt)
dB
18.08
17.97
17.75
17.91
17.68
D
[1]
%
48.34
45.60
47.01
47.03
46.54
Z
S
31.24
j31.07
50.56
j12.48
43.66 + j17.27
24.13 + j28.47
10.56 + j22.21
Measured with Z
L
optimized for G
p
.
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.2 Ruggedness in class-AB operation
The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
V
DS
= 32 V; I
Dq
= 50 mA; P
L
= 20 W; t
p
= 300
s;
= 10 %.
BLS6G3135-20_6G3135S-20#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
4 of 13
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
7.3 Graphs
17
G
p
(dB)
15
η
D
G
p
001aaf983
50
η
D
(%)
40
17
G
p
(dB)
15
001aaf984
(2)
(3)
(1)
13
30
13
11
20
11
9
10
9
7
3
3.2
3.4
f (GHz)
0
3.6
7
0
10
20
P
L
(W)
30
V
DS
= 32 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %;
P
L
= 20 W.
V
DS
= 32 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 2.
Power gain and drain efficiency as functions
of frequency; typical values
60
001aaf985
Fig 3.
Power gain as a function of load power; typical
values
30
(2) (3)
001aaf986
(1)
η
D
(%)
50
(1)
(2)
(3)
P
L
(W)
20
40
30
10
20
10
0
10
20
P
L
(W)
30
0
0
0.4
0.8
P
i
(W)
1.2
V
DS
= 32 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
V
DS
= 32 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 4.
Efficiency as a function of load power; typical
values
Fig 5.
Load power as a function of input power;
typical values
BLS6G3135-20_6G3135S-20#5
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 1 September 2015
5 of 13
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