BLS6G2735L-30;
BLS6G2735LS-30
S-band LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 3.5 GHz.
Table 1.
Application information
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 50 mA.
Test signal
f
(GHz)
pulsed RF
pulsed RF
pulsed RF
3.1 to 3.5
2.7 to 3.3
2.7 to 3.5
V
DS
(V)
32
32
32
P
L
(W)
30
35
30
G
p
(dB)
13
14
12
D
(%)
50
50
47
t
r
(ns)
20
20
20
t
f
(ns)
10
10
10
Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz
Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz
Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.7 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz
BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLS6G2735L-30 (SOT1135A)
1
2
3
2
3
sym112
1
BLS6G2735LS-30 (SOT1135B)
1
2
3
drain
gate
source
[1]
1
2
3
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLS6G2735L-30
BLS6G2735LS-30
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT1135A
SOT1135B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Min
-
0.5
65
-
Max
60
+13
+150
225
Unit
V
V
C
C
BLS6G2735L-30_6G2735LS-30#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 17
BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-c)
Thermal characteristics
Parameter
Conditions
Typ
Unit
transient thermal impedance from junction T
h
= 85
C;
P
L(CW)
= 30 W
to case
t = 100
s;
= 10 %
p
0.507 K/W
0.662 K/W
0.761 K/W
0.594 K/W
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 40 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 8.3 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 1.4 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1.4 A
Min
65
1.4
-
-
-
-
-
Typ
-
2
-
8.2
-
2.8
0.37
Max
-
2.4
1.4
-
140
-
0.58
Unit
V
V
A
A
nA
S
Table 7.
RF characteristics
Test signal: pulsed RF; f
1
= 3100 MHz; f
2
= 3300 MHz; f
3
= 3500 MHz; t
p
= 300
s;
= 10 %;
V
DS
= 32 V; I
Dq
= 50 mA; T
case
= 25
C; unless otherwise specified, in the class-AB RF production
test circuit.
Symbol
P
L
G
p
D
t
r
t
f
Parameter
output power
power gain
drain efficiency
rise time
fall time
P
L
= 30 W
P
L
= 30 W
P
L
= 30 W
P
L
= 30 W
Conditions
Min Typ
-
11
43
-
-
30
13
50
20
10
Max
-
-
-
50
50
Unit
W
dB
%
ns
ns
BLS6G2735L-30_6G2735LS-30#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 17
BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
7. Application information
7.1 Circuit information for application circuit (2.7 GHz to 3.5 GHz)
V
DD
C6
C5
C2
C1
C4
C3
V
GG
C7
aaa-001308
Printed-Circuit Board (PCB): Rogers 3006;
r
= 6.15; thickness = 0.64 mm;
thickness copper plating = 35
m.
See
Table 8
for a list of components.
Fig 1.
Component layout for RF test circuit
Table 8.
List of components
For test circuit see
Figure 1.
Component
C1
C2
C3
C4, C7
C5
C6
[1]
[2]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
Value
2
F,
50 V
100 pF
0.6 pF
10 pF
1
F,
50 V
470
F,
63 V
[1]
[2]
[2]
[2]
[1]
Remarks
TDK or capacitor of same quality.
American Technical Ceramics type 800A or capacitor of same quality.
BLS6G2735L-30_6G2735LS-30#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 17
BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
7.2 Measured in application circuit from 2.7 GHz to 3.5 GHz
35
(5)
(4)
(3)
(2)
(1)
aaa-001302
G
p
(dB)
30
25
20
15
10
70
η
D
(%)
60
50
40
50
P
L
(W)
40
aaa-001303
(1)
(2)
(3)
(4)
(5)
(6)
η
D
30
(7)
(8)
(9)
G
p
30
20
20
(5)
(4)
(3)
(2)
(1)
10
10
0
0
5
0
0
10
20
30
40
P
L
(W)
50
0
1
2
3
P
i
(W)
4
V
DS
= 32 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %
(1) f = 2700 MHz
(2) f = 2900 MHz
(3) f = 3100 MHz
(4) f = 3300 MHz
(5) f = 3500 MHz
V
DS
= 32 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2900 MHz
(4) f = 3000 MHz
(5) f = 3100 MHz
(6) f = 3200 MHz
(7) f = 3300 MHz
(8) f = 3400 MHz
(9) f = 3500 MHz
Fig 2.
Power gain and drain efficiency as function of
output power; typical values
Fig 3.
Output power as a function of input power;
typical values
BLS6G2735L-30_6G2735LS-30#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 17
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