BAS81/BAS82/BAS83
Schottky Barrier Diode
Features
1. Small surface mounting type
2. High reliability
3. Low leakage current
4. low forward voltage drop
5. Low capacitance
Applications
Diode for low currents with a low supply voltage
Small battery charger
HF-Detector
Protection circuit
DC/DC converter for notebooks
Protection circuit ……
Absolute Maximum Ratings
T
j
=25℃
Parameter
Reverse voltage
Test Conditions
Type
BAS81
BAS82
BAS83
Repetitive peak forward current
Peak forward surge current
Forward current
Junction temperature
Storage temperature range
t
p
=1 s
Symbol
V
RRM
V
RRM
V
RRM
I
FRM
I
FSM
I
F
T
j
T
stg
Value
40
50
60
150
500
30
125
-65~+150
Unit
V
V
V
mA
mA
mA
℃
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
1/3
BAS81/BAS82/BAS83
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=0.1mA
I
F
=1mA
I
F
=15mA
Reverse current
V
R
=40V
V
R
=50V
V
R
=60V
Diode capacitance
V
R
=1V, f=1MHz
BAS81
BAS82
BAS83
Type
Symbol
V
F
V
F
V
F
I
R
I
R
I
R
C
D
Min
Typ
Max
0.33
0.41
1
0.2
0.2
0.2
1.6
Unit
V
V
V
μA
μA
μA
pF
Characteristics
(T
j
=25℃ unless otherwise specified)
Reverse power dissipation: P
R
(mW)
Junction Temperature: T
j
(℃)
Reverse current: I
R
(μA)
Junction Temperature: T
j
(℃)
Figure 1. Max. reverse power dissipation
vs. junction temperature
Figure 2. Reverse current vs. junction temperature
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
2/3
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
