JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SC4738
TRANSISTOR (NPN)
SOT–523
FEATURES
High Voltage and Current
High DC Current Gain
Complementary to 2SA1832
Small Package
APPLICATIONS
General Purpose Amplification
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
150
100
1250
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V,I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
80
3.5
120
Min
60
50
5
100
100
700
0.25
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
nA
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
Y
120–240
LY
GR
200–400
LG
BL
350–700
LL
A,Oct,2010
Typical Characterisitics
8
2SC4738-CAN
1000
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
h
FE
h
FE
T
a
=100
℃
——
I
C
(mA)
20uA
6
18uA
16uA
14uA
300
COLLECTOR CURRENT
4
12uA
10uA
8uA
DC CURRENT GAIN
T
a
=25
℃
I
C
100
2
6uA
4uA
I
B
=2uA
30
0
0
2
4
6
8
10
12
10
0.1
COMMON EMITTER
V
CE
=6V
0.3
1
3
10
30
100 150
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
300
V
CEsat
——
I
C
β=10
1.2
V
BEsat
——
I
C
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
100
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
T
a
=25
℃
T
a
=100
℃
30
T
a
=100
℃
0.4
T
a
=25
℃
10
0.1
0.3
1
3
10
30
100 150
0.0
0.1
0.3
1
3
10
30
100 150
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
150
100
I
C
COMMON EMITTER
V
CE
=6V
—— V
BE
20
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
(mA)
30
C
ib
10
T
a
=25
℃
COLLECTOR CURRENT
10
T
a
=100
℃
CAPACITANCE
C
(pF)
I
C
3
C
ob
3
1
T
a
=25
℃
0.3
0.1
0.2
0.4
0.6
0.8
1.0
1
0.1
0.3
1
3
10
20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
125
P
C
—— T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
100
75
50
25
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Oct,2010
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