LS4148 / LS4448
Fast Switching Diode
Features
Silicon Epitaxial Planar Diodes
Electrical data identical with the devices 1N4148 and 1N4448 respectively
Quadro Melf package
Applications
Extreme fast switches
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80)
Weight: approx. 34 mg
Cathode Band Color: Black
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
V
R
=0
t
p
= 1
us
Test Condition
( T
amb
=25
o
C unless otherwise specified )
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
Value
100
75
2
500
300
150
500
Unit
V
V
A
mA
mA
mA
mW
Thermal Characteristics
Parameter
Junction ambient
Junction temperature
Stroage temperature range
Test Condition
on PC board
50 mm X 50mm X 1.6mm
( T
amb
=25
o
C unless otherwise specified )
Symbol
R
thJA
T
j
T
stg
Value
500
175
-65 to +175
Unit
K/W
o
o
C
C
Electrical Characteristics
Parameter
Forward voltage
I
F
=5
mA
I
F
=50
mA
I
F
=100
mA
Reverse current
V
R
=20V
V
R
=20V, T
j
=150
o
C
V
R
=75V
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
I
R
=100
uA
, t
p
/T=0.01, t
p
=0.3
ms
V
R
=0, f=1MHz, V
HF
=50
mV
V
HF
=2V, f=100MHz
I
F
=I
R
=10
m
A, i
R
=1
mΑ
I
F
=10
m
A, V
R
=6V,
i
R
=0.1x I
R
, R
L
=100
Ω
t
rr
Test Condition
Part
LS 4448
LS 4148
LS 4148
I
R
I
R
I
R
V
(BR)
C
D
η
r
V
F
Symbol
( T
amb
=25
o
C unless otherwise specified )
Min.
0.62
0.86
0.93
Typ.
Max.
0.72
1
1
25
50
5
100
4
45
8
4
ns
nA
uA
uA
V
pF
%
V
Unit
656