BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
POWER SEMICONDUCTOR
Features
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
G
E
D
G
H
K
J
L
M
SOT-23
Dim
A
D
TOP VIEW
S
B
C
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
A
B
C
D
E
G
H
J
K
L
M
Mechanical Data
•
•
•
•
•
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: S70, K70
Weight: 0.008 grams (approx.)
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Continuous
V
GSS
I
D
P
d
R
θJA
T
j
, T
STG
BS870
60
60
±20
250
310
400
-55 to +150
Units
V
V
V
mA
mW
K/W
°C
Characteristic
Drain-Gate Voltage R
GS
≤
1.0MΩ
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
@ T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
60
1.0
80
Typ
80
2.0
3.5
1.0
22
11
2.0
2.0
5.0
Max
0.5
±10
3.0
5.0
0.5
50
25
5.0
20
20
Unit
V
µA
nA
V
Ω
A
mS
pF
pF
pF
ns
ns
V
ES
= 10V, R
L
= 150Ω,
V
DS
= 10V, R
D
= 100Ω
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 100µA
V
DS
= 25V, V
GS
= 0V
V
GS
=
±15V,
V
DS
= 0V
V
DS
= V
GS
, I
D
=-250µA
V
GS
= 10V, I
D
= 0.2A
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
≤
300µs, duty cycle
≤
2%.
DS11302 Rev. G-2
1 of 2
BS870
1.0
V
GS
= 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
7
T
j
= 25
°
C
0.8
I
D
, DRAIN-SOURCE CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
5
V
GS
= 5.0V
5.5V
0.6
4
3
V
GS
= 10V
5.0V
0.4
2
1
0
0.2
0
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
0
0.2
0.4
0.6
0.8
1.0
I
D
, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
2.0
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5
1.5
V
GS
= 10V, I
D
= 0.5A
4
I
D
= 500mA
I
D
= 50mA
V
GS
= 5.0V, I
D
= 0.05A
1.0
3
2
0.5
1
0
-55
-30
-5
20
45
70
95
120
145
T
j
, JUNCTION TEMPERATURE (
°
C)
Fig. 3 On-Resistance vs Junction Temperature
0
0
2
4
6
8
10
12
14
16
18
V
GS
, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
DS11302 Rev. G-2
2 of 2
BS870
嵌入式系统
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