LITE-ON
SEMICONDUCTOR
SMC SERIES
STAND-OFF VOLTAGE -
6.8
to
200
Volts
POWER DISSIPATION -
1500
WATTS
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
FEATURES
Rating to 200V VBR
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification 94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ps for
Uni-direction,less than 5.0ns for Bi-direction,form 0 Volts
to BV min
SMC
SMC
A
DIM.
A
B
C
B
C
D
E
F
MIN.
6.60
5.59
2.92
0.15
7.75
0.05
2.01
0.76
MAX.
7.11
6.22
3.18
0.31
8.13
0.20
2.62
1.52
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional device
none cathode band denotes bi-directional device
Weight : 0.007 ounces, 0.21 gram
G
H
E
F
D
G
H
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
PEAK POWER DISSIPATION AT T
A
= 25 C,
T
P
= 1ms (Note 1,2)
Peak Forward Surge Current 8.3ms
single half sine-wave super imposed
on rated load (Note 3)
(JEDEC METHOD)
SYMBOLS
VALUE
UNIT
P
PK
Minimum 1500
WATTS
I
FSM
200
AMPS.
Steady State Power Dissipation at T
L
=75 C
P
M(AV)
5.0
WATTS
Maximum Instantaneous forward voltage
at 100A for unidirectional devices only (Note 3)
V
F
SEE NOTE 4
Volts
Operating Temperature Range
T
J
-55 to +150
C
Storage Temperature Range
T
STG
-55 to +175
C
NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 C per fig.1.
REV. 2, 01-Dec-2000, KSIC01
2. Thermal Resistance junction to Lead
3. 8.3ms single half-sine wave duty cycle= 4 pulses maximum per minute (unidirectional units only).
4. V
F
= 3.5V on SMC6.8 thru SMC90A devices and V
F
= 5.0V on SMC100 thru SMC200A devices.
RATING AND CHARACTERISTIC CURVES
SMC SERIES
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT
100
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - PULSE DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
200
100
75
50
25
10 X 1000 WAVEFORM
AS DEFINED BY R.E.A.
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
0
0
25
50
75
100
125
150
175
200
10
1
2
5
10
20
50
100
AMBIENT TEMPERATURE,
℃
NUMBER OF CYCLES AT 60Hz
FIG.3 - PULSE WAVEFORM
10000
FIG.4 - TYPICAL JUNCTION CAPACITANCE
T
R
=10us
I
P,
PEAK PULSE CURRENT , (% )
100
Peak value (I
RSM)
Half value=
I
RSM
2
CAPACITANCE , (pF)
Uni-directional
1000
Bi-directional
Pulse width (T
P
) is defined
as that point where the
peak current decays to
50% of I
RSM
50
TP
10 x 1000 waveform as
defined by R.E.A.
T
J
= 25 C
100
T
J
=25 C
0
0
1.0
2.0
3.0
4.0
10
1
10
100
1000
T , TIME ( ms )
STAND-OFF VOLTAGE, VOLTS
FIG.5 - PULSE RATING CURVE
100
T
A
=150 C
PM
(AV)
STEADY STATE POWER DISSIPATION (W)
FIG.6 - STEADY STATE POWER DERATING CURVE
5.0
P
P
, PEAK POWER ( K
W
)
4.0
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3.
3.0
2.0
1.0
5.0mm LEAD AREAS
1.0
60Hz RESISTIVE OR
INDUCTIVE LOAD
0.1
0.1us
1.0us
10us
100us
1.0ms
10ms
0.0
0
25
50
75
100
125
150
175
200
T
P
, PULSE WIDTH
TL, LEAD TEMPERATURE
REV. 2, 01-Dec-2000, KSIC01
Device
Uni-
directional
Device
Bi-
directional
Device
Marking code
Breakdowm voltage
VBR Volts
Working
PeakReverse
Voltage
V
RWM
(Volts)
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
Maximum
Reverse
Leakage at
V
RWM
IR (uA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Reverse Surge
Current
I
RSM
(Amps)
22.12
23.15
20.41
21.40
18.63
19.48
16.85
17.65
15.31
16.30
13.89
14.56
12.71
13.27
11.45
12.00
10.42
10.95
9.49
9.87
8.67
9.09
8.02
8.38
6.98
7.25
6.52
6.85
6.15
6.41
5.81
6.10
5.23
5.47
Maximum
Reverse Voltage
at I
RSM
(Clamping
Voltage)
V
RSM
(Volts)
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
(UNI)
SMC47
SMC47A
SMC51
SMC51A
SMC56
SMC56A
SMC62
SMC62A
SMC68
SMC68A
SMC75
SMC75A
SMC82
SMC82A
SMC91
SMC91A
SMC100
SMC100A
SMC110
SMC110A
SMC120
SMC120A
SMC130
SMC130A
SMC150
SMC150A
SMC160
SMC160A
SMC170
SMC170A
SMC180
SMC180A
SMC200
SMC200A
NOTE :
SMC47C
SMC47CA
SMC45C
SMC45CA
SMC56C
SMC56CA
SMC62C
SMC62CA
SMC68C
SMC68CA
SMC75C
SMC75CA
SMC82C
SMC82CA
SMC91C
SMC91CA
SMC100C
SMC100CA
SMC110C
SMC110CA
SMC120C
SMC120CA
SMC130C
SMC130CA
SMC150C
SMC150CA
SMC160C
SMC160CA
SMC170C
SMC170CA
SMC180C
SMC180CA
SMC200C
SMC200CA
FDK
FEK
FFK
FGK
FHK
FKK
FLK
(BI)
FDM
FEM
FFM
FGM
FHM
FKM
FLM
Min.
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.8
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
Max.
51.7
49.4
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.0
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
@IT( mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
FMK FMM
FNK
FPK
FQK
FRK
FSK
FTK
FUK
FVK
FNM
FPM
FQM
FRM
FSM
FTM
FUM
FVM
FWK FWM
FXK
FYK
FZK
FXM
FYM
FZM
GDK GDM
GEK GEM
GFK
GFM
GGK GGM
GHK GHM
GKK GKM
GLK GLM
GMK GMM
GNK GNM
GPK
GPM
GQK GQM
GRK GRM
GSK
GSM
GTK GTM
1) Suffix 'A ' denotes 5% tolerance device,no suffix denotes 10 % tolerance device.
2) Add suffix 'C 'or ' CA ' after part number to specify Bi-directional devices.
3) For Bi-Directional devices having VR of 10 volts and under, the IR limit is double .
4) For Uni-directional devices VF max=3.5v at if=35 A ,0.5 sine wave of 8.3 msec .pulse width.
Microchip MCU
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