LITE-ON
SEMICONDUCTOR
MBR830 thru MBR860
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 8.0
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
B
C
K
PIN
1
2
TO-220AC
L
M
D
A
E
TO-220AC
MAX.
MIN.
DIM.
14.22
15.88
A
9.65
10.67
B
C
2.54
3.43
D
5.84
6.86
9.28
8.26
E
F
G
H
-
12.70
6.35
14.73
F
G
I
H
J
N
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
PIN 1
PIN 2
CASE
4.83
5.33
1.14
0.51
I
J
0.30
0.64
K
3.53
4.09
3.56
4.83
L
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at T
C
=125 C (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage (Note 1)
SYMBOL
MBR830
MBR835
35
24.5
35
MBR840
40
28
40
8
MBR845
45
31.5
45
MBR850
50
35
50
MBR860
60
42
60
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
30
21
30
I
FSM
dv/dt
V
F
0.57
0.70
0.84
150
10000
0.70
0.80
0.95
0.1
15
A
V/us
V
V
mA
mA
pF
C/W
I
F
=8A @ T
J
=125 C
I
F
=8A @ T
J
=25 C
I
F
=16A @ T
J
=25 C
@T
J
=25 C
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
R
C
J
R
0JC
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
250
3.0
-55 to +150
-55 to +175
T
J
T
STG
C
C
REV. 0, 04-Mar-2002, KTHA05
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
RATING AND CHARACTERISTIC CURVES
MBR830 thru MBR860
AVERAGE FORWARD CURRENT
AMPERES
10
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
2
5
10
20
50
100
8
6
4
RESISTIVE OR
INDUCTIVE LOAD
2
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
T
J
= 125 C
10
MBR830 ~ MBR845
10
MBR850 ~ MBR860
1.0
0.1
1.0
0.01
T
J
= 25 C
T
J
= 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
0
20
40
60
80
100
120
140
0.1
0
0.2
0.4
0.6
0.8
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
CAPACITANCE , (pF)
100
T
J
= 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
REV. 0, 04-Mar-2002, KTHA05
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